Coaxial GaAs-AlGaAs core-multishell nanowire lasers with epitaxial gain control

• Published in: Applied physics letters Vol. 108; no. 1
• Main Authors: Stettner, T., Zimmermann, P., Loitsch, B., Döblinger, M., Regler, A., Mayer, B., Winnerl, J., Matich, S., Riedl, H., Kaniber, M., Abstreiter, G., Koblmüller, G., Finley, J. J.
• Format: Journal Article
• Language: English
• Published: Melville American Institute of Physics 04.01.2016
• Subjects: ALUMINIUM ARSENIDES; Aluminum gallium arsenides; Applied physics; CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; Design optimization; Emission; Epitaxial growth; GAIN; Gallium arsenide; GALLIUM ARSENIDES; LANTHANUM SELENIDES; LASERS; Lasing; NANOWIRES; OPTICAL PUMPING; QUANTUM WELLS; SEMICONDUCTOR MATERIALS; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0273-0400 K

We demonstrate the growth and single-mode lasing operation of GaAs-AlGaAs core-multishell nanowires (NW) with radial single and multiple GaAs quantum wells (QWs) as active gain media. When subject to optical pumping lasing emission with distinct s-shaped input-output characteristics, linewidth narro...