Nonlinear and saturable absorption characteristics of amorphous InSe thin films
We prepared very thin amorphous InSe films and investigated the thickness dependence of the nonlinear absorption by pump-probe and open aperture Z-scan techniques. While thinner films (20 and 52 nm) exhibit saturable absorption, thicker films (70 and 104 nm) exhibit nonlinear absorption for 4 ns, 65...
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| Published in | Journal of applied physics Vol. 107; no. 3; pp. 033115 - 033115-6 |
|---|---|
| Main Authors | , , , , |
| Format | Journal Article |
| Language | English |
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American Institute of Physics
01.02.2010
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| Abstract | We prepared very thin amorphous InSe films and investigated the thickness dependence of the nonlinear absorption by pump-probe and open aperture Z-scan techniques. While thinner films (20 and 52 nm) exhibit saturable absorption, thicker films (70 and 104 nm) exhibit nonlinear absorption for 4 ns, 65 ps, and 44 fs pulse durations. This behavior is attributed to increasing localized defect states in the energy band gap as the film thickness increases. We developed a theoretical model incorporating one photon, two photon, and free carrier absorptions and their saturations to derive the transmission in the open aperture Z-scan experiment. The theory of open aperture Gaussian beam Z-scan based on the Adomian decomposition method was used to fit the experimental curves. Nonlinear absorption coefficients along with saturation intensity thresholds were extracted from fitting the experimental results for all pulse durations. The lowest saturation threshold was found about
3
×
10
−
3
GW
/
cm
2
for 20 nm film thickness with nanosecond pulse duration and increased about four orders of magnitude for 104 nm film thickness. |
|---|---|
| AbstractList | We prepared very thin amorphous InSe films and investigated the thickness dependence of the nonlinear absorption by pump-probe and open aperture Z-scan techniques. While thinner films (20 and 52 nm) exhibit saturable absorption, thicker films (70 and 104 nm) exhibit nonlinear absorption for 4 ns, 65 ps, and 44 fs pulse durations. This behavior is attributed to increasing localized defect states in the energy band gap as the film thickness increases. We developed a theoretical model incorporating one photon, two photon, and free carrier absorptions and their saturations to derive the transmission in the open aperture Z-scan experiment. The theory of open aperture Gaussian beam Z-scan based on the Adomian decomposition method was used to fit the experimental curves. Nonlinear absorption coefficients along with saturation intensity thresholds were extracted from fitting the experimental results for all pulse durations. The lowest saturation threshold was found about
3
×
10
−
3
GW
/
cm
2
for 20 nm film thickness with nanosecond pulse duration and increased about four orders of magnitude for 104 nm film thickness. We prepared very thin amorphous InSe films and investigated the thickness dependence of the nonlinear absorption by pump-probe and open aperture Z-scan techniques. While thinner films (20 and 52 nm) exhibit saturable absorption, thicker films (70 and 104 nm) exhibit nonlinear absorption for 4 ns, 65 ps, and 44 fs pulse durations. This behavior is attributed to increasing localized defect states in the energy band gap as the film thickness increases. We developed a theoretical model incorporating one photon, two photon, and free carrier absorptions and their saturations to derive the transmission in the open aperture Z-scan experiment. The theory of open aperture Gaussian beam Z-scan based on the Adomian decomposition method was used to fit the experimental curves. Nonlinear absorption coefficients along with saturation intensity thresholds were extracted from fitting the experimental results for all pulse durations. The lowest saturation threshold was found about 3×10−3 GW/cm2 for 20 nm film thickness with nanosecond pulse duration and increased about four orders of magnitude for 104 nm film thickness. |
| Author | Yaglioglu, H. Gul Elmali, Ayhan Yüksek, Mustafa Ateş, Aytunç Kürüm, Ulaş |
| Author_xml | – sequence: 1 givenname: Mustafa surname: Yüksek fullname: Yüksek, Mustafa organization: Department of Engineering Physics, Faculty of Engineering, Ankara University, 06100 Ankara, Turkey – sequence: 2 givenname: Ulaş surname: Kürüm fullname: Kürüm, Ulaş organization: Department of Engineering Physics, Faculty of Engineering, Ankara University, 06100 Ankara, Turkey – sequence: 3 givenname: H. surname: Yaglioglu middlename: Gul fullname: Yaglioglu, H. Gul organization: Department of Engineering Physics, Faculty of Engineering, Ankara University, 06100 Ankara, Turkey – sequence: 4 givenname: Ayhan surname: Elmali fullname: Elmali, Ayhan email: elmali@eng.ankara.edu.tr. organization: Department of Engineering Physics, Faculty of Engineering, Ankara University, 06100 Ankara, Turkey – sequence: 5 givenname: Aytunç surname: Ateş fullname: Ateş, Aytunç organization: Department of Engineering Physics, Faculty of Engineering, Ankara University, 06100 Ankara, Turkey |
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