Nanocrystals at MBE-grown GaN/GaAs(001) interfaces

• Published in: Applied surface science Vol. 166; no. 1; pp. 317 - 321
• Main Authors: Zsebök, O., Thordson, J.V., Ilver, L., Andersson, T.G.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 09.10.2000; Elsevier Science
• Subjects: Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; GaAs; GaN; Interface structure and roughness; Materials science; MBE; Methods of deposition of films and coatings; film growth and epitaxy; Molecular, atomic, ion, and chemical beam epitaxy; Nitrogen damage; Physics; Solid surfaces and solid-solid interfaces; Structure and morphology; thickness; Surface morphology; Surface reconstruction; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Thin film structure and morphology; EE; IJF; Surface morphology; NID; 81.15.Hi; Nitrogen damage; GaAs; 61.14.Hg; AQ; NAD; MBE; Surface reconstruction; GaN; 68.55.Jk; GD; 81.05.Ea; SZE; Gallium arsenides; Inorganic compounds; Semiconductor materials; Gallium nitrides; Binary compounds; Solid-solid interfaces; Experimental study; AES; Morphology; Nitridation; Molecular beam epitaxy; Nanocrystal
• ISSN: 0169-4332; 1873-5584
• DOI: 10.1016/S0169-4332(00)00471-2

Molecular beam epitaxy (MBE) growth utilising an RF-plasma nitrogen source was used to study surface reconstruction and the effects of nitridation damage on the surface and interface morphology of GaN on GaAs(001) at 580°C. Keeping both the N-flow and plasma excitation power constant, the grown layers were studied with the Ga-flux as a parameter. In the initial growth stage, a (3×3) surface reconstruction was observed. Samples grown under N-rich, Ga-rich and stoichiometric conditions were characterised by high-resolution scanning electron microscopy (SEM) and atomic force microscopy (AFM) to reveal the surface morphology. The nitridation damage was characterised by Auger-electron spectroscopy (AES), X-ray diffraction (XRD) spectroscopy and high-resolution SEM, which revealed separated GaN and GaAs phases at interfaces deeply in the substrate region, bordered by {101} and {111} facets. The defect formation at the GaN/GaAs interface depended on the N/Ga-flux ratio.