Revealing DRAM Operating GuardBands Through Workload-Aware Error Predictive Modeling

• Published in: IEEE transactions on computers Vol. 70; no. 11; pp. 1976 - 1987
• Main Authors: Mukhanov, Lev, Tovletoglou, Konstantinos, Vandierendonck, Hans, Nikolopoulos, Dimitrios S., Karakonstantis, Georgios
• Format: Journal Article
• Language: English
• Published: New York IEEE 01.11.2021; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Benchmark testing; Data centers; DRAM; Dynamic random access memory; energy consumption; Errors; Failure; Feature extraction; GuardBands; Integrated circuit reliability; low-power electronics; Machine learning; Memory management; Modules; Prediction models; Predictive models; Random access memory; reliability; Servers; Storage capacity; Voltage; Workload

Improving the energy efficiency of DRAMs becomes very challenging due to the growing demand for storage capacity and failures induced by the manufacturing process. To protect against failures, vendors adopt conservative margins in the refresh period and supply voltage. Previously, it was shown that...