Light-current characteristics of high-power pulsed semiconductor lasers (1060 nm) operating at increased (up to 90 °C) temperatures
Pulsed radiative characteristics of high-power semiconductor lasers based on an asymmetric InGaAs/AlGaAs/GaAs heterostructure with an active region including two quantum wells and a gradient waveguide on the side of the p-emitter are studied. It is shown that the use of the proposed design allows ef...
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Published in | Quantum electronics (Woodbury, N.Y.) Vol. 51; no. 2; pp. 129 - 132 |
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Main Authors | , , , , , , , |
Format | Journal Article |
Language | English |
Published |
Bristol
Kvantovaya Elektronika and IOP Publishing Limited
01.02.2021
IOP Publishing |
Subjects | |
Online Access | Get full text |
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