Fabrication and characterization of metal-oxide-nitride-oxynitride-polysilicon nonvolatile semiconductor memory device with silicon oxynitride ( Si O x N y ) as tunneling layer on glass

• Published in: Journal of applied physics Vol. 102; no. 9; pp. 094502 - 094502-4
• Main Authors: Jung, Sungwook, Kim, Jaehong, Son, Hyukjoo, Hwang, Sunghyun, Jang, Kyungsoo, Lee, Jungin, Lee, Kwangsoo, Park, Hyungjun, Kim, Kyunghae, Yi, Junsin, Chung, Hokyoon, Choi, Byoungdeog, Lee, Kiyong
• Format: Journal Article
• Language: English
• Published: American Institute of Physics 01.11.2007
• ISSN: 0021-8979; 1089-7550
• DOI: 10.1063/1.2802201

A nonvolatile semiconductor memory (NVSM) device with a metal-oxide-nitride-oxynitride-polysilicon (MONOS) structure on a rough polysilicon (poly-Si) surface was fabricated using a low-temperature process and poly-Si thin film transistor (TFT) technology on glass. For the fabrication of the NVSM device on glass, plasma-assisted oxynitridation was carried out using nitrous oxide ( N 2 O ) as a reactive gas, due to the very rough surface of the poly-Si on glass annealed using an excimer laser. The ultrathin Si O x N y films obtained using the N 2 O plasma have a very uniform distribution on poly-Si and similar contents of oxygen and nitrogen in the peaks and valleys of the grains. The NVSM devices having a MONOS structure with a tunneling layer of ultrathin Si O x N y on glass have suitable switching and charge retention characteristics for data storage. The results demonstrate that the NVSM device made using low-temperature poly-Si TFT technology on glass reported in this paper can be used in various types of display devices.