Phase-change properties related to anharmonicity of local structure
Ge-Sb-Te pseudo-binary compounds are known to be phase-change materials (PCM). Most of these chalcogenide compounds are candidate for future phase-change random access memory (PCRAM) applications since they show abrupt change on crystalline-amorphous phase-change process. For the use in next-generat...
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| Published in | Current applied physics Vol. 20; no. 6; pp. 807 - 816 |
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| Main Authors | , , , , , , , , |
| Format | Journal Article |
| Language | English |
| Published |
Elsevier B.V
01.06.2020
한국물리학회 |
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| Online Access | Get full text |
| ISSN | 1567-1739 1878-1675 1567-1739 |
| DOI | 10.1016/j.cap.2020.03.019 |
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| Abstract | Ge-Sb-Te pseudo-binary compounds are known to be phase-change materials (PCM). Most of these chalcogenide compounds are candidate for future phase-change random access memory (PCRAM) applications since they show abrupt change on crystalline-amorphous phase-change process. For the use in next-generation applications, increase of retention properties and decrease of power needed for phase-change process are required. These phase-change properties depend on various material characteristics, and thermal conductivity is one of them. In this study, to introduce an easier method for evaluating the local structural anharmonicity of phase-change materials, optical pump terahertz (THz) probe experiments were performed. By investigating the phonon behaviours in PCM by this method and comparing them with local structural information extracted from extended X-ray absorption fine structure (EXAFS) on Ge1Sb2Te4 and Ge2Sb2Te5 films, the effects of resonant bonding on lattice anharmonicity and thermal conductivity were determined. As resonant bonding in the local structure get enhanced, local distortion of the system decrease which cause the decrease in anharmonicity. The quantitatively-measured anharmonicity obtained from the optical pump THz probe experiments can be closely related to the structural and electrical properties, thus reflecting well the difference of phase-change properties between Ge1Sb2Te4 and Ge2Sb2Te5 films.
•Enhancement of resonant bond in GST124 compared to GST225 was observed around Ge atoms.•Resonant bond and anharmonicity of local structure were verified with calculations.•Electrical properties measured from PCRAM unit-cell were explained with local structure.•Using optical pump-THz probe measurements, the anharmonicity of PCMs were compared with decay time.•The trend of phase-change properties could be derived to a significant degree. |
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| AbstractList | Ge-Sb-Te pseudo-binary compounds are known to be phase-change materials (PCM). Most of these chalcogenide compounds are candidate for future phase-change random access memory (PCRAM) applications since they show abrupt change on crystalline-amorphous phase-change process. For the use in next-generation applications, increase of retention properties and decrease of power needed for phase-change process are required. These phase-change properties depend on various material characteristics, and thermal conductivity is one of them. In this study, to introduce an easier method for evaluating the local structural anharmonicity of phase-change materials, optical pump terahertz (THz) probe experiments were performed. By investigating the phonon behaviours in PCM by this method and comparing them with local structural information extracted from extended X-ray absorption fine structure (EXAFS) on Ge1Sb2Te4 and Ge2Sb2Te5 films, the effects of resonant bonding on lattice anharmonicity and thermal conductivity were determined. As resonant bonding in the local structure get enhanced, local distortion of the system decrease which cause the decrease in anharmonicity. The quantitatively-measured anharmonicity obtained from the optical pump THz probe experiments can be closely related to the structural and electrical properties, thus reflecting well the difference of phase-change properties between Ge1Sb2Te4 and Ge2Sb2Te5 films. KCI Citation Count: 0 Ge-Sb-Te pseudo-binary compounds are known to be phase-change materials (PCM). Most of these chalcogenide compounds are candidate for future phase-change random access memory (PCRAM) applications since they show abrupt change on crystalline-amorphous phase-change process. For the use in next-generation applications, increase of retention properties and decrease of power needed for phase-change process are required. These phase-change properties depend on various material characteristics, and thermal conductivity is one of them. In this study, to introduce an easier method for evaluating the local structural anharmonicity of phase-change materials, optical pump terahertz (THz) probe experiments were performed. By investigating the phonon behaviours in PCM by this method and comparing them with local structural information extracted from extended X-ray absorption fine structure (EXAFS) on Ge1Sb2Te4 and Ge2Sb2Te5 films, the effects of resonant bonding on lattice anharmonicity and thermal conductivity were determined. As resonant bonding in the local structure get enhanced, local distortion of the system decrease which cause the decrease in anharmonicity. The quantitatively-measured anharmonicity obtained from the optical pump THz probe experiments can be closely related to the structural and electrical properties, thus reflecting well the difference of phase-change properties between Ge1Sb2Te4 and Ge2Sb2Te5 films. •Enhancement of resonant bond in GST124 compared to GST225 was observed around Ge atoms.•Resonant bond and anharmonicity of local structure were verified with calculations.•Electrical properties measured from PCRAM unit-cell were explained with local structure.•Using optical pump-THz probe measurements, the anharmonicity of PCMs were compared with decay time.•The trend of phase-change properties could be derived to a significant degree. |
| Author | Yang, Wonjun Jeong, Kwang-sik Jung, Hoon Ahn, Min Park, Jaehun Park, Sungjin Cho, Mann-Ho Han, Jeonghwa Kim, Dasol |
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| Snippet | Ge-Sb-Te pseudo-binary compounds are known to be phase-change materials (PCM). Most of these chalcogenide compounds are candidate for future phase-change... |
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