Micro-Mechanism of Silicon-Based Waveguide Surface Smoothing in Hydrogen Annealing

The micro-mechanism of the silicon-based waveguide surface smoothing is investigated systematically to explore the effects of silicon-hydrogen bonds on high-temperature hydrogen annealing waveguides. The effect of silicon- hydrogen bonds on the surface migration movement of silicon atoms and the wav...

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Published inChinese physics letters Vol. 33; no. 12; pp. 110 - 114
Main Author 段倩倩 任馨宇 菅傲群 张辉 冀健龙 张强 张文栋 桑胜波
Format Journal Article
LanguageEnglish
Published 01.12.2016
Subjects
原子状态
平滑
微观机理
氢退火
硅基波导
表面形貌
表面粗糙度
表面迁移
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ISSN0256-307X
1741-3540
DOI10.1088/0256-307X/33/12/126801

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Summary:The micro-mechanism of the silicon-based waveguide surface smoothing is investigated systematically to explore the effects of silicon-hydrogen bonds on high-temperature hydrogen annealing waveguides. The effect of silicon- hydrogen bonds on the surface migration movement of silicon atoms and the waveguide surface topography are revealed. The micro-migration from an upper state to a lower state of silicon atoms is driven by silicon- hydrogen bonding, which is the key to ameliorate the rough surface morphology of the silicon-based waveguide. The process of hydrogen annealing is experimentally validated based on the simulated parameters. The surface roughness declines from 1.523nm to 0.461 nm.
Bibliography:11-1959/O4
Qian-Qian Duan1,2, Xin-Yu Ren1,2, Ao-Qun Jian1,2, Hui Zhang1,2, Jian-Long Ji1,2, Qiang Zhangl,2, Wen-Dong Zhang1,2, Sheng-Bo Sang1,2 （1.Micro Nano System Research Center, College of Information Engineering, Taiyuan University of Technology, Taiyuan 030600; 2. Key Laboratory of Advanced Transducersr and Intelligent Control System （Ministry of Education）,Taiyuan University of Technology, Taiyuan 030600）
The micro-mechanism of the silicon-based waveguide surface smoothing is investigated systematically to explore the effects of silicon-hydrogen bonds on high-temperature hydrogen annealing waveguides. The effect of silicon- hydrogen bonds on the surface migration movement of silicon atoms and the waveguide surface topography are revealed. The micro-migration from an upper state to a lower state of silicon atoms is driven by silicon- hydrogen bonding, which is the key to ameliorate the rough surface morphology of the silicon-based waveguide. The process of hydrogen annealing is experimentally validated based on the simulated parameters. The surface roughness declines from 1.523nm to 0.461 nm.
ISSN:0256-307X
1741-3540
DOI:10.1088/0256-307X/33/12/126801