Comparison of GaN/AlGaN/AlN/GaN HEMTs Grown on Sapphire with Fe-Modulation-Doped and Unintentionally Doped GaN Buffer： Material Growth and Device Fabrication - 巩稼民 王权 闫俊达 刘峰奇 冯春 王晓亮 王占国 (Chinese physics letters, 2016)