Comparison of GaN/AlGaN/AlN/GaN HEMTs Grown on Sapphire with Fe-Modulation-Doped and Unintentionally Doped GaN Buffer： Material Growth and Device Fabrication
AlGaN/GaN high electron mobility transistors （HEMTs） grown on Fe-modulation-doped （MD） and unintentionally doped （UID） GaN buffer layers are investigated and compared. Highly resistive GaN buffers （10^9Ω·cm） are induced by individual mechanisms for the electron traps＇ formation： the Fe MD buffer （sa...
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| Published in | Chinese physics letters Vol. 33; no. 11; pp. 99 - 103 |
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| Main Author | |
| Format | Journal Article |
| Language | English |
| Published |
01.11.2016
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| Online Access | Get full text |
| ISSN | 0256-307X 1741-3540 |
| DOI | 10.1088/0256-307X/33/11/117303 |
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| Abstract | AlGaN/GaN high electron mobility transistors （HEMTs） grown on Fe-modulation-doped （MD） and unintentionally doped （UID） GaN buffer layers are investigated and compared. Highly resistive GaN buffers （10^9Ω·cm） are induced by individual mechanisms for the electron traps＇ formation： the Fe MD buffer （sample A） and the UID buffer with high density of edge-type dislocations （7.24×10^9cm^-2, sample B）. The 300K Hall test indicates that the mobility of sample A with Fe doping （2503cm^2V^-1s^-1） is much higher than sample B （1926cm^2V^-1s^-1） due to the decreased scattering effect on the two-dimensional electron gas. HEMT devices are fabricated on the two samples and pulsed I–V measurements are conducted. Device A shows better gate pinch-off characteristics and a higher threshold voltage （-2.63V） compared with device B （-3.71V）. Lower gate leakage current ｜IGS｜ of device A （3.32×10^-7A） is present compared with that of device B （8.29×10^-7A）. When the off-state quiescent points Q_2 （V GQ2=-8V, V DQ2=0V） are on, V th hardly shifts for device A while device B shows ＋0.21V positive threshold voltage shift, resulting from the existence of electron traps associated with the dislocations in the UID-GaN buffer layer under the gate. Under pulsed I–V and transconductance G m–V GS measurement, the device with the Fe MD-doped buffer shows more potential in improving reliability upon off-state stress. |
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| AbstractList | AlGaN/GaN high electron mobility transistors （HEMTs） grown on Fe-modulation-doped （MD） and unintentionally doped （UID） GaN buffer layers are investigated and compared. Highly resistive GaN buffers （10^9Ω·cm） are induced by individual mechanisms for the electron traps＇ formation： the Fe MD buffer （sample A） and the UID buffer with high density of edge-type dislocations （7.24×10^9cm^-2, sample B）. The 300K Hall test indicates that the mobility of sample A with Fe doping （2503cm^2V^-1s^-1） is much higher than sample B （1926cm^2V^-1s^-1） due to the decreased scattering effect on the two-dimensional electron gas. HEMT devices are fabricated on the two samples and pulsed I–V measurements are conducted. Device A shows better gate pinch-off characteristics and a higher threshold voltage （-2.63V） compared with device B （-3.71V）. Lower gate leakage current ｜IGS｜ of device A （3.32×10^-7A） is present compared with that of device B （8.29×10^-7A）. When the off-state quiescent points Q_2 （V GQ2=-8V, V DQ2=0V） are on, V th hardly shifts for device A while device B shows ＋0.21V positive threshold voltage shift, resulting from the existence of electron traps associated with the dislocations in the UID-GaN buffer layer under the gate. Under pulsed I–V and transconductance G m–V GS measurement, the device with the Fe MD-doped buffer shows more potential in improving reliability upon off-state stress. |
| Author | 巩稼民 王权 闫俊达 刘峰奇 冯春 王晓亮 王占国 |
| AuthorAffiliation | School of Electronic Engineering, Xi＇an University of Posts and Telecommunications, Xi＇an 710121 Key Laboratory of Semiconductor Materials Science, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 |
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| CitedBy_id | crossref_primary_10_1002_pssa_202000827 crossref_primary_10_1016_j_micrna_2024_208028 crossref_primary_10_1016_j_aeue_2019_02_016 crossref_primary_10_3390_cryst13101456 crossref_primary_10_7498_aps_69_20191557 crossref_primary_10_3390_electronics10010046 crossref_primary_10_1134_S1063739723600590 |
| Cites_doi | 10.1063/1.119176 10.1063/1.1490147 10.1016/j.jcrysgro.2013.07.017 10.1016/j.sse.2007.12.014 10.1002/pssa.200460417 10.1016/j.tsf.2008.06.092 10.1063/1.2535899 10.1109/TED.2011.2160547 10.1063/1.126143 10.1116/1.1752907 10.1063/1.1318728 10.1109/LED.2009.2018288 10.1063/1.2951615 10.1063/1.366235 10.1063/1.4793196 10.1109/JPROC.2007.911060 10.1063/1.3663573 10.1109/TED.2003.816549 10.1016/j.jcrysgro.2006.10.219 10.1063/1.4773244 10.1109/16.906451 10.1063/1.4907861 10.1063/1.3293454 10.1109/LED.2010.2052587 10.1109/JPROC.2009.2034397 10.1063/1.3499364 10.1063/1.4806980 10.1109/TED.2013.2278290 10.1063/1.3456008 |
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| Notes | AlGaN/GaN high electron mobility transistors （HEMTs） grown on Fe-modulation-doped （MD） and unintentionally doped （UID） GaN buffer layers are investigated and compared. Highly resistive GaN buffers （10^9Ω·cm） are induced by individual mechanisms for the electron traps＇ formation： the Fe MD buffer （sample A） and the UID buffer with high density of edge-type dislocations （7.24×10^9cm^-2, sample B）. The 300K Hall test indicates that the mobility of sample A with Fe doping （2503cm^2V^-1s^-1） is much higher than sample B （1926cm^2V^-1s^-1） due to the decreased scattering effect on the two-dimensional electron gas. HEMT devices are fabricated on the two samples and pulsed I–V measurements are conducted. Device A shows better gate pinch-off characteristics and a higher threshold voltage （-2.63V） compared with device B （-3.71V）. Lower gate leakage current ｜IGS｜ of device A （3.32×10^-7A） is present compared with that of device B （8.29×10^-7A）. When the off-state quiescent points Q_2 （V GQ2=-8V, V DQ2=0V） are on, V th hardly shifts for device A while device B shows ＋0.21V positive threshold voltage shift, resulting from the existence of electron traps associated with the dislocations in the UID-GaN buffer layer under the gate. Under pulsed I–V and transconductance G m–V GS measurement, the device with the Fe MD-doped buffer shows more potential in improving reliability upon off-state stress. 11-1959/O4 Jia-Min Gong1, Quan Wang1,2, Jun-Da Yan2, Feng-Qi Liu2, Chun Feng2, Xiao-Liang Wang2, Zhan-Guo Wang2 （1School of Electronic Engineering, Xi＇an University of Posts and Telecommunications, Xi＇an 710121;bKey Laboratory of Semiconductor Materials Science, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083） |
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| Title | Comparison of GaN/AlGaN/AlN/GaN HEMTs Grown on Sapphire with Fe-Modulation-Doped and Unintentionally Doped GaN Buffer： Material Growth and Device Fabrication |
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