Optical-Electrical Characteristics and Carrier Dynamics of Semi-Insulation GaAs by Terahertz Spectroscopic Technique

• Published in: Chinese physics letters Vol. 33; no. 12; pp. 23 - 27
• Main Author: 韩小卫 侯磊 杨磊 王志全 赵萌萌 施卫
• Format: Journal Article
• Language: English
• Published: 01.12.2016

OaAs has been widely used to fabricate a variety of optoelectronic devices by virtue of its superior performance, and it is very important to accurately measure its electrical and optical properties. In this study, a semi- insulation （SI） GaAs wafer is investigated by the terahertz （THz） non-destruc...