Optical-Electrical Characteristics and Carrier Dynamics of Semi-Insulation GaAs by Terahertz Spectroscopic Technique

OaAs has been widely used to fabricate a variety of optoelectronic devices by virtue of its superior performance, and it is very important to accurately measure its electrical and optical properties. In this study, a semi- insulation （SI） GaAs wafer is investigated by the terahertz （THz） non-destruc...

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Published inChinese physics letters Vol. 33; no. 12; pp. 23 - 27
Main Author 韩小卫 侯磊 杨磊 王志全 赵萌萌 施卫
Format Journal Article
LanguageEnglish
Published 01.12.2016
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Abstract OaAs has been widely used to fabricate a variety of optoelectronic devices by virtue of its superior performance, and it is very important to accurately measure its electrical and optical properties. In this study, a semi- insulation （SI） GaAs wafer is investigated by the terahertz （THz） non-destructive testing technology. Using an air biased coherent generation and detection THz time domain spectroscopy system, the THz time domain waveform and spectrum of SI-GaAs are obtained by the time domain spectroscopy module, and its optical- electrical characteristics including complex refractive index, permittivity and dielectric loss angle are calculated. Its carrier lifetime is measured by the optical-pump THz-probe module, and the THz pulse induced intervalley scattering in photo-excited SI-GaAs is discussed.
AbstractList OaAs has been widely used to fabricate a variety of optoelectronic devices by virtue of its superior performance, and it is very important to accurately measure its electrical and optical properties. In this study, a semi- insulation （SI） GaAs wafer is investigated by the terahertz （THz） non-destructive testing technology. Using an air biased coherent generation and detection THz time domain spectroscopy system, the THz time domain waveform and spectrum of SI-GaAs are obtained by the time domain spectroscopy module, and its optical- electrical characteristics including complex refractive index, permittivity and dielectric loss angle are calculated. Its carrier lifetime is measured by the optical-pump THz-probe module, and the THz pulse induced intervalley scattering in photo-excited SI-GaAs is discussed.
Author 韩小卫 侯磊 杨磊 王志全 赵萌萌 施卫
AuthorAffiliation Department of Applied Physics, Xi ＇an University of Technology, Xi＇an 710048 Institute of Physical and Electrical Engineering, Weinan Normal University, Weinan 714000
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Cites_doi 10.1364/OE.20.018016
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Notes OaAs has been widely used to fabricate a variety of optoelectronic devices by virtue of its superior performance, and it is very important to accurately measure its electrical and optical properties. In this study, a semi- insulation （SI） GaAs wafer is investigated by the terahertz （THz） non-destructive testing technology. Using an air biased coherent generation and detection THz time domain spectroscopy system, the THz time domain waveform and spectrum of SI-GaAs are obtained by the time domain spectroscopy module, and its optical- electrical characteristics including complex refractive index, permittivity and dielectric loss angle are calculated. Its carrier lifetime is measured by the optical-pump THz-probe module, and the THz pulse induced intervalley scattering in photo-excited SI-GaAs is discussed.
11-1959/O4
Xiao-Wei Han1,2, Lei Hou1, Lei Yang1, Zhi-Quan Wang1, Meng-Meng Zhao1, Wei Shi（1. Department of Apphed Physics, Xi＇an University of Technology, Xi＇an 710048; 2.Institute of PhysicM and Electrical Engineering, Weinan Normal University, Weinan 714000）
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