Optical-Electrical Characteristics and Carrier Dynamics of Semi-Insulation GaAs by Terahertz Spectroscopic Technique
OaAs has been widely used to fabricate a variety of optoelectronic devices by virtue of its superior performance, and it is very important to accurately measure its electrical and optical properties. In this study, a semi- insulation （SI） GaAs wafer is investigated by the terahertz （THz） non-destruc...
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| Published in | Chinese physics letters Vol. 33; no. 12; pp. 23 - 27 |
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| Main Author | |
| Format | Journal Article |
| Language | English |
| Published |
01.12.2016
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| Online Access | Get full text |
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| Summary: | OaAs has been widely used to fabricate a variety of optoelectronic devices by virtue of its superior performance, and it is very important to accurately measure its electrical and optical properties. In this study, a semi- insulation （SI） GaAs wafer is investigated by the terahertz （THz） non-destructive testing technology. Using an air biased coherent generation and detection THz time domain spectroscopy system, the THz time domain waveform and spectrum of SI-GaAs are obtained by the time domain spectroscopy module, and its optical- electrical characteristics including complex refractive index, permittivity and dielectric loss angle are calculated. Its carrier lifetime is measured by the optical-pump THz-probe module, and the THz pulse induced intervalley scattering in photo-excited SI-GaAs is discussed. |
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| Bibliography: | OaAs has been widely used to fabricate a variety of optoelectronic devices by virtue of its superior performance, and it is very important to accurately measure its electrical and optical properties. In this study, a semi- insulation （SI） GaAs wafer is investigated by the terahertz （THz） non-destructive testing technology. Using an air biased coherent generation and detection THz time domain spectroscopy system, the THz time domain waveform and spectrum of SI-GaAs are obtained by the time domain spectroscopy module, and its optical- electrical characteristics including complex refractive index, permittivity and dielectric loss angle are calculated. Its carrier lifetime is measured by the optical-pump THz-probe module, and the THz pulse induced intervalley scattering in photo-excited SI-GaAs is discussed. 11-1959/O4 Xiao-Wei Han1,2, Lei Hou1, Lei Yang1, Zhi-Quan Wang1, Meng-Meng Zhao1, Wei Shi（1. Department of Apphed Physics, Xi＇an University of Technology, Xi＇an 710048; 2.Institute of PhysicM and Electrical Engineering, Weinan Normal University, Weinan 714000） |
| ISSN: | 0256-307X 1741-3540 |
| DOI: | 10.1088/0256-307X/33/12/120701 |