Current spreading in GaN-based light-emitting diodes

• Published in: Chinese physics B Vol. 25; no. 11; pp. 424 - 429
• Main Author: 李强 李虞锋 张敏妍 丁文 云峰
• Format: Journal Article
• Language: English
• Published: 01.11.2016

We have investigated the factors affecting the current spreading length（CSL） in GaN-based light-emitting diodes（LEDs） by deriving theoretical expressions and performing simulations with APSYS.For mesa-structure LEDs,the effects of both indium tin oxide（ITO） and n-GaN are taken into account for the f...