Coexistence of unipolar and bipolar modes in Ag/ZnO/Pt resistive switching memory with oxygen-vacancy and metal-Ag filaments

In this study, the unipolar resistive switching （URS） and bipolar resistive switching （BRS） are demonstrated to be coexistent in the Ag/ZnO/Pt memory device, and both modes are observed to strongly depend on the polarity of forming voltage. The mechanisms of the URS and BRS behaviors could be attrib...

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Published inChinese physics B Vol. 25; no. 12; pp. 418 - 423
Main Author 马寒露 王中强 徐海阳 张磊 赵晓宁 韩曼舒 马剑钢 刘益春
Format Journal Article
LanguageEnglish
Published 01.12.2016
Subjects
共存
单极
双极模式
开关比
氧空位
电阻
金属银
非易失性存储器
Online AccessGet full text
ISSN1674-1056
2058-3834
DOI10.1088/1674-1056/25/12/127303

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Abstract In this study, the unipolar resistive switching （URS） and bipolar resistive switching （BRS） are demonstrated to be coexistent in the Ag/ZnO/Pt memory device, and both modes are observed to strongly depend on the polarity of forming voltage. The mechanisms of the URS and BRS behaviors could be attributed to the electric-field-induced migration of oxygen vacancies （Vo） and metal-Ag conducting filaments （CFs） respectively, which are confirmed by investigating the temperature dependences of low resistance states in both modes. Furthermore, we compare the resistive switching （RS） characteristics （e.g., forming and switching voltages, reset current and resistance states） between these two modes based on Vo- and Ag-CFs. The BRS mode shows better switching uniformity and lower power than the URS mode. Both of these modes exhibit good RS performances, including good retention, reliable cycling and high-speed switching. The result indicates that the coexistence of URS and BRS behaviors in a single device has great potential applications in future nonvolatile multi-level memory.
AbstractList In this study, the unipolar resistive switching （URS） and bipolar resistive switching （BRS） are demonstrated to be coexistent in the Ag/ZnO/Pt memory device, and both modes are observed to strongly depend on the polarity of forming voltage. The mechanisms of the URS and BRS behaviors could be attributed to the electric-field-induced migration of oxygen vacancies （Vo） and metal-Ag conducting filaments （CFs） respectively, which are confirmed by investigating the temperature dependences of low resistance states in both modes. Furthermore, we compare the resistive switching （RS） characteristics （e.g., forming and switching voltages, reset current and resistance states） between these two modes based on Vo- and Ag-CFs. The BRS mode shows better switching uniformity and lower power than the URS mode. Both of these modes exhibit good RS performances, including good retention, reliable cycling and high-speed switching. The result indicates that the coexistence of URS and BRS behaviors in a single device has great potential applications in future nonvolatile multi-level memory.
Author 马寒露 王中强 徐海阳 张磊 赵晓宁 韩曼舒 马剑钢 刘益春
AuthorAffiliation Center for Advanced Optoelectronic Functional Materials Research and Key Laboratory for Ultra Violet （UV） Light-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun 130024, China
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DocumentTitleAlternate Coexistence of unipolar and bipolar modes in Ag/ZnO/Pt resistive switching memory with oxygen-vacancy and metal-Ag filaments
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Notes resistive switching, unipolar, bipolar, oxygen vacancy, metal, conductive filament
Han-Lu Ma, Zhong-Qiang Wang, Hai-Yang Xu, Lei Zhang, Xiao-Ning Zhao, Man-Shu Han, Jian-Gang Ma, and Yi-Chun Liu（Center for Advanced Optoelectronic Functional Materials Research and Key Laboratory for Ultra Violet （UV） Light-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun 130024, China）
11-5639/O4
In this study, the unipolar resistive switching （URS） and bipolar resistive switching （BRS） are demonstrated to be coexistent in the Ag/ZnO/Pt memory device, and both modes are observed to strongly depend on the polarity of forming voltage. The mechanisms of the URS and BRS behaviors could be attributed to the electric-field-induced migration of oxygen vacancies （Vo） and metal-Ag conducting filaments （CFs） respectively, which are confirmed by investigating the temperature dependences of low resistance states in both modes. Furthermore, we compare the resistive switching （RS） characteristics （e.g., forming and switching voltages, reset current and resistance states） between these two modes based on Vo- and Ag-CFs. The BRS mode shows better switching uniformity and lower power than the URS mode. Both of these modes exhibit good RS performances, including good retention, reliable cycling and high-speed switching. The result indicates that the coexistence of URS and BRS behaviors in a single device has great potential applications in future nonvolatile multi-level memory.
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SubjectTerms 共存
单极
双极模式
开关比
氧空位
电阻
金属银
非易失性存储器
Title Coexistence of unipolar and bipolar modes in Ag/ZnO/Pt resistive switching memory with oxygen-vacancy and metal-Ag filaments
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