Coexistence of unipolar and bipolar modes in Ag/ZnO/Pt resistive switching memory with oxygen-vacancy and metal-Ag filaments
In this study, the unipolar resistive switching （URS） and bipolar resistive switching （BRS） are demonstrated to be coexistent in the Ag/ZnO/Pt memory device, and both modes are observed to strongly depend on the polarity of forming voltage. The mechanisms of the URS and BRS behaviors could be attrib...
Saved in:
| Published in | Chinese physics B Vol. 25; no. 12; pp. 418 - 423 |
|---|---|
| Main Author | |
| Format | Journal Article |
| Language | English |
| Published |
01.12.2016
|
| Subjects | |
| Online Access | Get full text |
| ISSN | 1674-1056 2058-3834 |
| DOI | 10.1088/1674-1056/25/12/127303 |
Cover
| Summary: | In this study, the unipolar resistive switching （URS） and bipolar resistive switching （BRS） are demonstrated to be coexistent in the Ag/ZnO/Pt memory device, and both modes are observed to strongly depend on the polarity of forming voltage. The mechanisms of the URS and BRS behaviors could be attributed to the electric-field-induced migration of oxygen vacancies （Vo） and metal-Ag conducting filaments （CFs） respectively, which are confirmed by investigating the temperature dependences of low resistance states in both modes. Furthermore, we compare the resistive switching （RS） characteristics （e.g., forming and switching voltages, reset current and resistance states） between these two modes based on Vo- and Ag-CFs. The BRS mode shows better switching uniformity and lower power than the URS mode. Both of these modes exhibit good RS performances, including good retention, reliable cycling and high-speed switching. The result indicates that the coexistence of URS and BRS behaviors in a single device has great potential applications in future nonvolatile multi-level memory. |
|---|---|
| Bibliography: | resistive switching, unipolar, bipolar, oxygen vacancy, metal, conductive filament Han-Lu Ma, Zhong-Qiang Wang, Hai-Yang Xu, Lei Zhang, Xiao-Ning Zhao, Man-Shu Han, Jian-Gang Ma, and Yi-Chun Liu（Center for Advanced Optoelectronic Functional Materials Research and Key Laboratory for Ultra Violet （UV） Light-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun 130024, China） 11-5639/O4 In this study, the unipolar resistive switching （URS） and bipolar resistive switching （BRS） are demonstrated to be coexistent in the Ag/ZnO/Pt memory device, and both modes are observed to strongly depend on the polarity of forming voltage. The mechanisms of the URS and BRS behaviors could be attributed to the electric-field-induced migration of oxygen vacancies （Vo） and metal-Ag conducting filaments （CFs） respectively, which are confirmed by investigating the temperature dependences of low resistance states in both modes. Furthermore, we compare the resistive switching （RS） characteristics （e.g., forming and switching voltages, reset current and resistance states） between these two modes based on Vo- and Ag-CFs. The BRS mode shows better switching uniformity and lower power than the URS mode. Both of these modes exhibit good RS performances, including good retention, reliable cycling and high-speed switching. The result indicates that the coexistence of URS and BRS behaviors in a single device has great potential applications in future nonvolatile multi-level memory. |
| ISSN: | 1674-1056 2058-3834 |
| DOI: | 10.1088/1674-1056/25/12/127303 |