An examination of the effect of dose rate on ion implanted impurity profiles in silicon
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Published in | Journal of the Electrochemical Society Vol. 142; no. 9; pp. 3215 - 3219 |
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Main Authors | , , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
Pennington, NJ
Electrochemical Society
01.09.1995
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Subjects | |
Online Access | Get full text |
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ISSN: | 0013-4651 1945-7111 |
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DOI: | 10.1149/1.2048717 |