麦耀华, 沈. 陈. 杨. 陈. 陈. 李. 代. 刘. 许. (2016). Control of epitaxial growth at a-Si：H/c-Si heterointerface by the working pressure in PECVD. Chinese physics B, 25(11), 679-684. https://doi.org/10.1088/1674-1056/25/11/118801
Chicago Style (17th ed.) Citation麦耀华, 沈艳娇 陈剑辉 杨静 陈兵兵 陈静伟 李峰 代秀红 刘海旭 许颖. "Control of Epitaxial Growth at A-Si：H/c-Si Heterointerface by the Working Pressure in PECVD." Chinese Physics B 25, no. 11 (2016): 679-684. https://doi.org/10.1088/1674-1056/25/11/118801.
MLA (9th ed.) Citation麦耀华, 沈艳娇 陈剑辉 杨静 陈兵兵 陈静伟 李峰 代秀红 刘海旭 许颖. "Control of Epitaxial Growth at A-Si：H/c-Si Heterointerface by the Working Pressure in PECVD." Chinese Physics B, vol. 25, no. 11, 2016, pp. 679-684, https://doi.org/10.1088/1674-1056/25/11/118801.
Warning: These citations may not always be 100% accurate.