Characterization of GaAs/AlGaAs graded index-separate confinement heterostructure lasers by raman scattering
We report the first use of Raman scattering to study GaAs/AlGaAs graded index-separate confinement heterostructure quantum-well lasers. We have used a forward scattering geometry in which the waveguide is endfired, and the light emerging from the opposite end facet is collected and spectrally analyz...
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| Published in | Journal of applied physics Vol. 68; no. 1; pp. 358 - 361 |
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| Main Authors | , |
| Format | Journal Article |
| Language | English |
| Published |
Woodbury, NY
American Institute of Physics
01.07.1990
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| Subjects | |
| Online Access | Get full text |
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| Abstract | We report the first use of Raman scattering to study GaAs/AlGaAs graded index-separate confinement heterostructure quantum-well lasers. We have used a forward scattering geometry in which the waveguide is endfired, and the light emerging from the opposite end facet is collected and spectrally analyzed. The probe is confined by the waveguide and thus interacts with the entire laser cavity. Because Raman scattering occurs in all regions of the heterostructure to which the optical mode is confined, this technique is a useful indication of the mode profile in waveguide heterostructures. We observe inhomogeneously broadened longitudinal and transverse optical phonons in the graded region. |
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| AbstractList | We report the first use of Raman scattering to study GaAs/AlGaAs graded index-separate confinement heterostructure quantum-well lasers. We have used a forward scattering geometry in which the waveguide is endfired, and the light emerging from the opposite end facet is collected and spectrally analyzed. The probe is confined by the waveguide and thus interacts with the entire laser cavity. Because Raman scattering occurs in all regions of the heterostructure to which the optical mode is confined, this technique is a useful indication of the mode profile in waveguide heterostructures. We observe inhomogeneously broadened longitudinal and transverse optical phonons in the graded region. |
| Author | SHEALY, J. R BRADSHAW, J |
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| Cites_doi | 10.1103/PhysRevLett.52.1822 10.1103/PhysRevLett.53.1280 10.1063/1.100786 10.1103/PhysRevB.36.1021 10.1063/1.99096 10.1103/PhysRevB.24.7194 10.1103/PhysRevB.33.8863 10.1063/1.1655195 10.1007/BF00885858 10.1103/PhysRevB.36.6142 |
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| Keywords | Characterization Raman scattering III-V compound Laser |
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| References | 2023062504040036800_r3 (2023062504040036800_r4) 1987; 36 (2023062504040036800_r13) 1984; 52 2023062504040036800_r5 (2023062504040036800_r8) 1972; 20 (2023062504040036800_r15) 1989; 54 (2023062504040036800_r7) 1970; 16 (2023062504040036800_r1) 1986; 33 (2023062504040036800_r10) 1984; 53 (2023062504040036800_r12) 1988; 52 2023062504040036800_r18 2023062504040036800_r17 (2023062504040036800_r2) 1978; 16 (2023062504040036800_r16) 1989; 66 (2023062504040036800_r11) 1987; 36 (2023062504040036800_r14) 1981; 24 (2023062504040036800_r9) 1977; 38 (2023062504040036800_r6) 1974; 24 |
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| Title | Characterization of GaAs/AlGaAs graded index-separate confinement heterostructure lasers by raman scattering |
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