Characterization of GaAs/AlGaAs graded index-separate confinement heterostructure lasers by raman scattering

We report the first use of Raman scattering to study GaAs/AlGaAs graded index-separate confinement heterostructure quantum-well lasers. We have used a forward scattering geometry in which the waveguide is endfired, and the light emerging from the opposite end facet is collected and spectrally analyz...

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Bibliographic Details
Published inJournal of applied physics Vol. 68; no. 1; pp. 358 - 361
Main Authors BRADSHAW, J, SHEALY, J. R
Format Journal Article
LanguageEnglish
Published Woodbury, NY American Institute of Physics 01.07.1990
Subjects
Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Characterization
Raman scattering
III-V compound
Laser
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Summary:We report the first use of Raman scattering to study GaAs/AlGaAs graded index-separate confinement heterostructure quantum-well lasers. We have used a forward scattering geometry in which the waveguide is endfired, and the light emerging from the opposite end facet is collected and spectrally analyzed. The probe is confined by the waveguide and thus interacts with the entire laser cavity. Because Raman scattering occurs in all regions of the heterostructure to which the optical mode is confined, this technique is a useful indication of the mode profile in waveguide heterostructures. We observe inhomogeneously broadened longitudinal and transverse optical phonons in the graded region.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
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ISSN:0021-8979
1089-7550
DOI:10.1063/1.347143