An experimental study of the main involved parameters in the epitaxial growth of CeO2 buffer layers on nickel tapes

In order to investigate the optimal conditions for highly oriented and epitaxial buffer layers on Ni based tapes, authors have grown several sequences of CeO2 films by PLD technique. Among the usual parameters governing this procedure to obtain high quality buffer layers, three of them received atte...

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Published inPhysica. C, Superconductivity Vol. 366; no. 2; pp. 109 - 116
Main Authors Arranz, M.A., Holzapfel, B., Reger, N., Eickemeyer, J., Schultz, L.
Format Journal Article
LanguageEnglish
Published 01.01.2002
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Abstract In order to investigate the optimal conditions for highly oriented and epitaxial buffer layers on Ni based tapes, authors have grown several sequences of CeO2 films by PLD technique. Among the usual parameters governing this procedure to obtain high quality buffer layers, three of them received attention through this work: target-substrate distance, buffer layer deposition temperature, and gas atmosphere inside the vacuum chamber during the growing process. Based on the following results, authors found a full crossed relation among them, which develops in obtaining textured layers of highly oriented CeO2 along the (001) ordered Ni substrate. 16 refs.
AbstractList In order to investigate the optimal conditions for highly oriented and epitaxial buffer layers on Ni based tapes, authors have grown several sequences of CeO2 films by PLD technique. Among the usual parameters governing this procedure to obtain high quality buffer layers, three of them received attention through this work: target-substrate distance, buffer layer deposition temperature, and gas atmosphere inside the vacuum chamber during the growing process. Based on the following results, authors found a full crossed relation among them, which develops in obtaining textured layers of highly oriented CeO2 along the (001) ordered Ni substrate. 16 refs.
Author Holzapfel, B.
Schultz, L.
Arranz, M.A.
Eickemeyer, J.
Reger, N.
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