Ferroelectric properties of SrBi2Ta2O9 thin films with Bi2O3 buffer layer by liquid-delivery metalorganic chemical vapor deposition

• Published in: Thin solid films Vol. 409; no. 1; pp. 133 - 137
• Main Authors: SHIN, W. C, CHOI, K. J, YOON, S. G
• Format: Conference Proceeding Journal Article
• Language: English
• Published: Lausanne Elsevier Science 22.04.2002
• Subjects: Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.); Condensed matter: electronic structure, electrical, magnetic, and optical properties; Cross-disciplinary physics: materials science; rheology; Dielectric, piezoelectric, ferroelectric and antiferroelectric materials; Dielectrics, piezoelectrics, and ferroelectrics and their properties; Electrical properties of specific thin films; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Exact sciences and technology; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Niobates, titanates, tantalates, pzt ceramics, etc; Other inorganic semiconductors; Physics; Buffer layer; SrBi2Ta2O9; Inorganic compounds; Transition element compounds; Tantalum oxides; Oxides; Bismuth oxides; Crystal growth from vapors; XRD; Experimental study; Ferroelectric properties; Fabrication property relation; MOCVD; Sandwich structures; AES; Thin films; Strontium oxides; Liquid-delivery MOCVD; Bi2O3 buffer layer; Ferroelectric materials; Liquid delivery; Hysteresis