Initial oxidation processes of ultrathin hafnium film and hafnium disilicide islands on Si(100)-2 × 1 surfaces studied using core-level X-ray photoelectron spectroscopy

• Published in: Surface science Vol. 693; p. 121551
• Main Authors: Kakiuchi, Takuhiro, Yamasaki, Hideki, Tsukada, Chie, Yoshigoe, Akitaka
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01.03.2020
• Subjects: Core-level photoelectron spectroscopy; Hafnium oxides; High-dielectric-constant material; Initial oxidation process; Metal-insulator-semiconductor structure; Synchrotron radiation; Hafnium oxides; Metal-insulator-semiconductor structure; Core-level photoelectron spectroscopy; High-dielectric-constant material; Initial oxidation process; Synchrotron radiation

•Chemical states of clean ultrathin hafnium film on Si(100) were analyzed by core-level photoelectron spectroscopy.•Initial oxidation of clean ultrathin hafnium film on Si(100) was investigated by core-level photoelectron spectroscopy.•Metallic hafnium on Si(100) rapidly oxidized, while silicides at...