Analysis of the dV/dt effect on an IGBT gate circuit in IPM - 华庆 李泽宏 张波 黄祥钧 程德凯 (Journal of semiconductors, 2013)
Keywords: Capacitance; dt; dV; Electric potential; Gate circuits; Gates (circuits); IGBT; IPM; Semiconductors; Spikes; Terminals; Voltage; 寄生电容; 栅极; 电压尖峰; 电路