Improvement of green InGaN-based LEDs efficiency using a novel quantum well structure

• Published in: Chinese physics B Vol. 26; no. 8; pp. 4 - 7
• Main Author: 李阳锋 江洋 迭俊珲 王彩玮 严砷 马紫光 吴海燕 王禄 贾海强 王文新 陈弘
• Format: Journal Article
• Language: English
• Published: 01.08.2017
• Subjects: InGaN; LED; 光输出功率; 发光二极管; 发光波长; 可见光谱; 电流注入; 量子阱结构

The green light emitting diodes （LEDs） have lower quantum efficiency than LEDs with other emission wavelengths in the visible spectrum. In this research, a novel quantum well structure was designed to improve the electroluminescence （EL） of green InGaN-based LEDs. Compared with the conventional quan...