Improvement of green InGaN-based LEDs efficiency using a novel quantum well structure

The green light emitting diodes （LEDs） have lower quantum efficiency than LEDs with other emission wavelengths in the visible spectrum. In this research, a novel quantum well structure was designed to improve the electroluminescence （EL） of green InGaN-based LEDs. Compared with the conventional quan...

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Published inChinese physics B Vol. 26; no. 8; pp. 4 - 7
Main Author 李阳锋 江洋 迭俊珲 王彩玮 严砷 马紫光 吴海燕 王禄 贾海强 王文新 陈弘
Format Journal Article
LanguageEnglish
Published 01.08.2017
Subjects
InGaN
LED
光输出功率
发光二极管
发光波长
可见光谱
电流注入
量子阱结构
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Abstract The green light emitting diodes （LEDs） have lower quantum efficiency than LEDs with other emission wavelengths in the visible spectrum. In this research, a novel quantum well structure was designed to improve the electroluminescence （EL） of green InGaN-based LEDs. Compared with the conventional quantum well structure, the novel structure LED gained 2.14 times light out power （LOP） at 20-mA current injection, narrower FWHM and lower blue-shift at different current injection conditions.
AbstractList The green light emitting diodes （LEDs） have lower quantum efficiency than LEDs with other emission wavelengths in the visible spectrum. In this research, a novel quantum well structure was designed to improve the electroluminescence （EL） of green InGaN-based LEDs. Compared with the conventional quantum well structure, the novel structure LED gained 2.14 times light out power （LOP） at 20-mA current injection, narrower FWHM and lower blue-shift at different current injection conditions.
Author 李阳锋 江洋 迭俊珲 王彩玮 严砷 马紫光 吴海燕 王禄 贾海强 王文新 陈弘
AuthorAffiliation Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China University of Chinese Academy of Sciences, Beijing 100049, China
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Notes InGaN, novel quantum wells, light-emitting diodes, electroluminescence
Yangfeng Li1,2, Yang Jiang1,2, Junhui Die1,2, Caiwei Wang1,2, Shen Yan1,2, Ziguang Ma1,2, Haiyan Wu1,2, Lu Wang1,2, Haiqiang Jia1,2, Wenxin Wang1,2, and Hong Chen1,2 （1 Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China 2 University of Chinese Academy of Sciences, Beijing 100049, China）
11-5639/O4
The green light emitting diodes （LEDs） have lower quantum efficiency than LEDs with other emission wavelengths in the visible spectrum. In this research, a novel quantum well structure was designed to improve the electroluminescence （EL） of green InGaN-based LEDs. Compared with the conventional quantum well structure, the novel structure LED gained 2.14 times light out power （LOP） at 20-mA current injection, narrower FWHM and lower blue-shift at different current injection conditions.
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Snippet The green light emitting diodes （LEDs） have lower quantum efficiency than LEDs with other emission wavelengths in the visible spectrum. In this research, a...
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SubjectTerms InGaN
LED
光输出功率
发光二极管
发光波长
可见光谱
电流注入
量子阱结构
Title Improvement of green InGaN-based LEDs efficiency using a novel quantum well structure
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