Highly Sensitive Detection of Deoxyribonucleic Acid Hybridization Using Au-Gated AlInN/GaN High Electron Mobility Transistor-Based Sensors
Gallium nitride- （GaN） based high electron mobility transistors （HEMTs） provide a good platform for biological detection. In this work, both Au-gated AlInN/GaN HEMT and AlGaN/GaN HEMT biosensors are fabricated for the detection of deoxyribonucleic acid （DNA） hybridization. The Au-gated AIInN/GaN HEM...
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| Published in | Chinese physics letters Vol. 34; no. 4; pp. 75 - 78 |
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| Main Author | |
| Format | Journal Article |
| Language | English |
| Published |
01.03.2017
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| Online Access | Get full text |
| ISSN | 0256-307X 1741-3540 |
| DOI | 10.1088/0256-307X/34/4/047301 |
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| Summary: | Gallium nitride- （GaN） based high electron mobility transistors （HEMTs） provide a good platform for biological detection. In this work, both Au-gated AlInN/GaN HEMT and AlGaN/GaN HEMT biosensors are fabricated for the detection of deoxyribonucleic acid （DNA） hybridization. The Au-gated AIInN/GaN HEMT biosensor exhibits higher sensitivity in comparison with the AlGaN/GaN HEMT biosensor. For the former, the drain-source current （VDS = 0.5 V） shows a clear decrease of 69μA upon the introduction of 1μmolL^-1 （μM） complimentary DNA to the probe DNA at the sensor area, while for the latter it is only 38 μA. This current reduction is a notable indication of the hybridization. The high sensitivity can be attributed to the thinner barrier of the AlInN/GaN heterostructure, which makes the two-dimensional electron gas channel more susceptible to a slight change of the surface charge. |
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| Bibliography: | 11-1959/O4 Xiang-Mi Zhan1, Mei-Lan Ha1,4, Quan Wang1, Wei Li1,Hong-Ling Xiao1,2,3, Chun Feng1,3, Li-Juan Jiang1,3, Cui-Mei Wang1,2,3, Xiao-Liang Wang1,2,3, Zhan-Guo Wang1,3（1 Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083; 2School of Microelectronics, University of Chinese Academy of Sciences, Beijing 100049 ;3 Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083 ;3 Department of Electro-mechanics, Handan College, Handan 056005） Gallium nitride- （GaN） based high electron mobility transistors （HEMTs） provide a good platform for biological detection. In this work, both Au-gated AlInN/GaN HEMT and AlGaN/GaN HEMT biosensors are fabricated for the detection of deoxyribonucleic acid （DNA） hybridization. The Au-gated AIInN/GaN HEMT biosensor exhibits higher sensitivity in comparison with the AlGaN/GaN HEMT biosensor. For the former, the drain-source current （VDS = 0.5 V） shows a clear decrease of 69μA upon the introduction of 1μmolL^-1 （μM） complimentary DNA to the probe DNA at the sensor area, while for the latter it is only 38 μA. This current reduction is a notable indication of the hybridization. The high sensitivity can be attributed to the thinner barrier of the AlInN/GaN heterostructure, which makes the two-dimensional electron gas channel more susceptible to a slight change of the surface charge. |
| ISSN: | 0256-307X 1741-3540 |
| DOI: | 10.1088/0256-307X/34/4/047301 |