High-Power Single-Spatial-Mode GaSb Tapered Laser around 2.0μm with Very Small Lateral Beam Divergence

We report high-power single-spatial-mode type-I GaSb-based tapered lasers fabricated on the InGaSb/AlGaAsSb material system. A straight ridge and three different tapered waveguide structures with varying flare angles are fabricated to optimize the output power and spatial-mode performance. The best...

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Published inChinese physics letters Vol. 34; no. 8; pp. 59 - 62
Main Author 黄书山 张宇 廖永平 杨成奥 柴小力 徐应强 倪海桥 牛智川
Format Journal Article
LanguageEnglish
Published 01.07.2017
Subjects
GaSb
光束发散角
模式化
激光器
空间模式
输出功率
锥形
高功率
Online AccessGet full text
ISSN0256-307X
1741-3540
DOI10.1088/0256-307X/34/8/084202

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Abstract We report high-power single-spatial-mode type-I GaSb-based tapered lasers fabricated on the InGaSb/AlGaAsSb material system. A straight ridge and three different tapered waveguide structures with varying flare angles are fabricated to optimize the output power and spatial-mode performance. The best devices exhibit single-spatial-mode operation with room-temperature output power up to 350？mW in continuous-wave mode at an emission wavelength around 2.0？μm with a very small far-field lateral divergence angle, which is beyond state of the art in terms of single-spatial-mode output power.
AbstractList We report high-power single-spatial-mode type-I GaSb-based tapered lasers fabricated on the InGaSb/AlGaAsSb material system. A straight ridge and three different tapered waveguide structures with varying flare angles are fabricated to optimize the output power and spatial-mode performance. The best devices exhibit single-spatial-mode operation with room-temperature output power up to 350？mW in continuous-wave mode at an emission wavelength around 2.0？μm with a very small far-field lateral divergence angle, which is beyond state of the art in terms of single-spatial-mode output power.
Author 黄书山 张宇 廖永平 杨成奥 柴小力 徐应强 倪海桥 牛智川
AuthorAffiliation State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049 Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026
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Notes Shu-Shan Huang1,2,3, Yu Zhang1,2,3, Yong-Ping Liao1,2,3, Cheng-Ao Yang1,2,3, Xiao-Li Chai1,2,3, Ying-Qiang Xu1,2,3, Hai-Qiao Ni1,2,3, Zhi-Chuan Niu1,2,3（1.State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083;2.College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049;3.Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026）
11-1959/O4
We report high-power single-spatial-mode type-I GaSb-based tapered lasers fabricated on the InGaSb/AlGaAsSb material system. A straight ridge and three different tapered waveguide structures with varying flare angles are fabricated to optimize the output power and spatial-mode performance. The best devices exhibit single-spatial-mode operation with room-temperature output power up to 350？mW in continuous-wave mode at an emission wavelength around 2.0？μm with a very small far-field lateral divergence angle, which is beyond state of the art in terms of single-spatial-mode output power.
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Snippet We report high-power single-spatial-mode type-I GaSb-based tapered lasers fabricated on the InGaSb/AlGaAsSb material system. A straight ridge and three...
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StartPage 59
SubjectTerms GaSb
光束发散角
模式化
激光器
空间模式
输出功率
锥形
高功率
Title High-Power Single-Spatial-Mode GaSb Tapered Laser around 2.0μm with Very Small Lateral Beam Divergence
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