Low power fluorine plasma effects on electrical reliability of AlGaN/GaN high electron mobility transistor
The new electrical degradation phenomenon of the AlGaN/GaN high electron mobility transistor（HEMT） treated by low power fluorine plasma is discovered. The saturated current, on-resistance, threshold voltage, gate leakage and breakdown voltage show that each experiences a significant change in a shor...
Saved in:
| Published in | Chinese physics B Vol. 26; no. 1; pp. 433 - 437 |
|---|---|
| Main Author | |
| Format | Journal Article |
| Language | English |
| Published |
2017
|
| Subjects | |
| Online Access | Get full text |
| ISSN | 1674-1056 2058-3834 |
| DOI | 10.1088/1674-1056/26/1/017304 |
Cover
Loading…
| Abstract | The new electrical degradation phenomenon of the AlGaN/GaN high electron mobility transistor（HEMT） treated by low power fluorine plasma is discovered. The saturated current, on-resistance, threshold voltage, gate leakage and breakdown voltage show that each experiences a significant change in a short time stress, and then keeps unchangeable. The migration phenomenon of fluorine ions is further validated by the electron redistribution and breakdown voltage enhancement after off-state stress. These results suggest that the low power fluorine implant ion stays in an unstable state. It causes the electrical properties of AlGaN/GaN HEMT to present early degradation. A new migration and degradation mechanism of the low power fluorine implant ion under the off-stress electrical stress is proposed. The low power fluorine ions would drift at the beginning of the off-state stress, and then accumulate between gate and drain nearby the gate side. Due to the strong electronegativity of fluorine, the accumulation of the front fluorine ions would prevent the subsequent fluorine ions from drifting, thereby alleviating further the degradation of AlGaN/GaN HEMT electrical properties. |
|---|---|
| AbstractList | The new electrical degradation phenomenon of the AlGaN/GaN high electron mobility transistor（HEMT） treated by low power fluorine plasma is discovered. The saturated current, on-resistance, threshold voltage, gate leakage and breakdown voltage show that each experiences a significant change in a short time stress, and then keeps unchangeable. The migration phenomenon of fluorine ions is further validated by the electron redistribution and breakdown voltage enhancement after off-state stress. These results suggest that the low power fluorine implant ion stays in an unstable state. It causes the electrical properties of AlGaN/GaN HEMT to present early degradation. A new migration and degradation mechanism of the low power fluorine implant ion under the off-stress electrical stress is proposed. The low power fluorine ions would drift at the beginning of the off-state stress, and then accumulate between gate and drain nearby the gate side. Due to the strong electronegativity of fluorine, the accumulation of the front fluorine ions would prevent the subsequent fluorine ions from drifting, thereby alleviating further the degradation of AlGaN/GaN HEMT electrical properties. |
| Author | 杨凌 周小伟 马晓华 吕玲 曹艳荣 张进成 郝跃 |
| AuthorAffiliation | State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology, Xidian University, Xi＇an 710071, China School of Advanced Materials and Nanotechnology, Xidian University, Xi＇an 710071, China School of Microelectronics, Xidian University, Xi＇an 710071, China School of Mechano-Electronic Engineering, Xidian University, Xi＇an 710071, China |
| Author_xml | – sequence: 1 fullname: 杨凌 周小伟 马晓华 吕玲 曹艳荣 张进成 郝跃 |
| BookMark | eNqFkM1KAzEURoNUsK0-ghDcj5P_yeCqFK1C0Y2uQ2aatClpUpOR0rd3Socu3Li4fHfxncvlTMAoxGAAuMfoESMpSywqVmDERUlEiUuEK4rYFRgTxGVBJWUjML50bsAk5y1CAiNCx2C7jAe4jweToPU_Mblg4N7rvNPQWGvaLsMYoPH9llyrPUzGO90477ojjBbO_EK_l_3AjVtvhmJP7OLQ6ZIO2eUupltwbbXP5m7IKfh6ef6cvxbLj8XbfLYsWiJRVwjLKiT5CnODbNMy3lCNLOEEV7KmhBLLOFoRjgU1uiaVpIaIuq5ZU2mrZUun4Ol8t00x52Ssal2nOxdD_4vzCiN10qZOStRJiSJCYXXW1tP8D71PbqfT8V_uYeA2May_XVhfQFFhLGuGMP0FC9N-rg |
| CitedBy_id | crossref_primary_10_1109_LED_2024_3394434 crossref_primary_10_1088_1674_1056_ac81a7 crossref_primary_10_1088_1674_1056_ab821e |
| Cites_doi | 10.1109/LED.2006.871887 10.1109/LED.2007.891281 10.1063/1.116384 10.1109/LED.2013.2279846 10.1063/1.3081019 10.1109/LED.2006.879046 10.1063/1.4815923 10.1109/ICSICT.2008.4734737 10.1109/LED.2012.2224632 10.1109/TED.2006.881054 10.1063/1.3106561 10.1109/LED.2005.851122 10.1063/1.2896646 |
| ContentType | Journal Article |
| DBID | 2RA 92L CQIGP ~WA AAYXX CITATION |
| DOI | 10.1088/1674-1056/26/1/017304 |
| DatabaseName | 维普期刊资源整合服务平台 中文科技期刊数据库-CALIS站点 维普中文期刊数据库 中文科技期刊数据库- 镜像站点 CrossRef |
| DatabaseTitle | CrossRef |
| DatabaseTitleList | |
| DeliveryMethod | fulltext_linktorsrc |
| Discipline | Physics |
| DocumentTitleAlternate | Low power fluorine plasma effects on electrical reliability of AlGaN/GaN high electron mobility transistor |
| EISSN | 2058-3834 |
| EndPage | 437 |
| ExternalDocumentID | 10_1088_1674_1056_26_1_017304 671189401 |
| GroupedDBID | 02O 1JI 1WK 29B 2RA 4.4 5B3 5GY 5VR 5VS 5ZH 6J9 7.M 7.Q 92L AAGCD AAJIO AAJKP AALHV AATNI ABHWH ABJNI ABQJV ACAFW ACGFS ACHIP AEFHF AENEX AFUIB AFYNE AHSEE AKPSB ALMA_UNASSIGNED_HOLDINGS ASPBG ATQHT AVWKF AZFZN BBWZM CCEZO CCVFK CEBXE CHBEP CJUJL CQIGP CRLBU CS3 DU5 EBS EDWGO EJD EMSAF EPQRW EQZZN FA0 FEDTE HAK HVGLF IJHAN IOP IZVLO JCGBZ KNG KOT M45 N5L NT- NT. PJBAE Q02 RIN RNS ROL RPA RW3 SY9 TCJ TGP UCJ W28 ~WA -SA -S~ AAYXX ACARI ADEQX AERVB AGQPQ AOAED ARNYC CAJEA CITATION Q-- U1G U5K |
| ID | FETCH-LOGICAL-c280t-6f47085d15e0fbc45b3a0f25217893232f450d25163ea92783e269994b7afa8c3 |
| ISSN | 1674-1056 |
| IngestDate | Tue Jul 01 02:55:19 EDT 2025 Thu Apr 24 22:54:17 EDT 2025 Wed Feb 14 10:05:28 EST 2024 |
| IsPeerReviewed | true |
| IsScholarly | true |
| Issue | 1 |
| Language | English |
| License | http://iopscience.iop.org/info/page/text-and-data-mining http://iopscience.iop.org/page/copyright |
| LinkModel | OpenURL |
| MergedId | FETCHMERGED-LOGICAL-c280t-6f47085d15e0fbc45b3a0f25217893232f450d25163ea92783e269994b7afa8c3 |
| Notes | Ling Yang1,2,Xiao-Wei Zhou1,2,Xiao-Hua Ma1,2,Ling Lv1,2,Yan-Rong Cao4,Jin-Cheng Zhang1,3,Yue Hao1,3（1. State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology, Xidian University, Xi＇an 710071, China; 2. School of Advanced Materials and Nanotechnology, Xidian University, Xi＇an 710071, China;3. School of Microelectronics, Xidian University, Xi＇an 710071, China; 4. School of Mechano-Electronic Engineering, Xidian University, Xi＇an 710071, China） The new electrical degradation phenomenon of the AlGaN/GaN high electron mobility transistor（HEMT） treated by low power fluorine plasma is discovered. The saturated current, on-resistance, threshold voltage, gate leakage and breakdown voltage show that each experiences a significant change in a short time stress, and then keeps unchangeable. The migration phenomenon of fluorine ions is further validated by the electron redistribution and breakdown voltage enhancement after off-state stress. These results suggest that the low power fluorine implant ion stays in an unstable state. It causes the electrical properties of AlGaN/GaN HEMT to present early degradation. A new migration and degradation mechanism of the low power fluorine implant ion under the off-stress electrical stress is proposed. The low power fluorine ions would drift at the beginning of the off-state stress, and then accumulate between gate and drain nearby the gate side. Due to the strong electronegativity of fluorine, the accumulation of the front fluorine ions would prevent the subsequent fluorine ions from drifting, thereby alleviating further the degradation of AlGaN/GaN HEMT electrical properties. AlGaN/GaN HEMT; low plasma power; fluorine implant ion; early electrical reliability 11-5639/O4 |
| PageCount | 5 |
| ParticipantIDs | crossref_citationtrail_10_1088_1674_1056_26_1_017304 crossref_primary_10_1088_1674_1056_26_1_017304 chongqing_primary_671189401 |
| ProviderPackageCode | CITATION AAYXX |
| PublicationCentury | 2000 |
| PublicationDate | 2017 2017-01-00 |
| PublicationDateYYYYMMDD | 2017-01-01 |
| PublicationDate_xml | – year: 2017 text: 2017 |
| PublicationDecade | 2010 |
| PublicationTitle | Chinese physics B |
| PublicationTitleAlternate | Chinese Physics |
| PublicationYear | 2017 |
| References | Ma C (7) 2010 11 12 Joh J (14) 2006 15 16 17 18 Cai Y (4) 2005; 771 1 2 3 5 6 Kim Y S (13) 2011 9 Yi C (8) 2007 10 |
| References_xml | – ident: 10 doi: 10.1109/LED.2006.871887 – ident: 12 doi: 10.1109/LED.2007.891281 – ident: 3 doi: 10.1063/1.116384 – volume: 771 year: 2005 ident: 4 publication-title: IEEE International Electron Devices Meeting – ident: 11 doi: 10.1109/LED.2013.2279846 – ident: 15 doi: 10.1063/1.3081019 – start-page: 415 year: 2006 ident: 14 publication-title: IEEE International Electron Devices Meeting – ident: 18 doi: 10.1109/LED.2006.879046 – ident: 2 doi: 10.1063/1.4815923 – start-page: 389 year: 2007 ident: 8 publication-title: IEEE International Electron Devices Meeting – ident: 5 doi: 10.1109/ICSICT.2008.4734737 – ident: 6 doi: 10.1109/LED.2012.2224632 – ident: 9 doi: 10.1109/TED.2006.881054 – ident: 16 doi: 10.1063/1.3106561 – ident: 1 doi: 10.1109/LED.2005.851122 – start-page: 20 year: 2010 ident: 7 publication-title: IEEE International Electron Devices Meeting – year: 2011 ident: 13 publication-title: Proceedings of the 23 – ident: 17 doi: 10.1063/1.2896646 |
| SSID | ssj0061023 |
| Score | 2.105877 |
| Snippet | The new electrical degradation phenomenon of the AlGaN/GaN high electron mobility transistor（HEMT） treated by low power fluorine plasma is discovered. The... |
| SourceID | crossref chongqing |
| SourceType | Enrichment Source Index Database Publisher |
| StartPage | 433 |
| SubjectTerms | AlGaN/GaN HEMT器件 低功率 可靠性 氟离子 电气 等离子体 高电子迁移率晶体管 |
| Title | Low power fluorine plasma effects on electrical reliability of AlGaN/GaN high electron mobility transistor |
| URI | http://lib.cqvip.com/qk/85823A/201701/671189401.html |
| Volume | 26 |
| hasFullText | 1 |
| inHoldings | 1 |
| isFullTextHit | |
| isPrint | |
| link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwnV1Lj9MwELaqRUhcEE9RFpAP-BRlm8SOYx-TNmVBsHDYlfYWJWnCQ91k2W2FxH9HYsaO0yLQCjg0ivyYsTKf7Bl3HoS8DEVYVm3E_SBZRb6ohfBLxUu_rZNylazgjIgwGvndiTw-E2_O4_PJ5Mee19J2Ux3V3_8YV_I_UoU2kCtGyf6DZEei0ADvIF94goTh-Vcyftt_8y6xzJnXrrfoSddgVejri3LnptF5ttCNkcVVs_5s83Kb_9XT9avyBLjD08O0xZ6rieNd9MOoDR5lLiXxqMWyXLBMsXTB8pjpjGXwkjClWarxRQdMyYzlS5bNmU5ZrpiCQSHLJdOSqWQYrUY3WtOzYKlCgtCv5p4hHQ5NGVBcGq5AcAl9hlU6N_M009zMWzCV23kB07FhkrMs8swoWIA2K9Es4-YF-HEzHIimATZlSxwHo5UCGoaN4rgw7ANqfP-OxAaDDhu6TAQcNfGQbtu0RUGsfO4uUYdTwMbt_4J2u6ULm6hj0A6ETVHz28EDmzXegThuGGdjLkVMhAXsomJ33o5ekDIB604LjD68FYGVg5VHXr__4BQJiVk18L7AEXUBaErNxrZZJGfhzLLA9CCf-u7jV1B69tSsPX3p9B65Oxg6NLWovU8mTfeA3DYOx_X1Q_IFsEsNdqnDLrXYpQN2ad_RHXbpHnZp31KD3Rn8KCKXOuRSh1y6Q-4jcrbMT-fH_lD3w68jFWx82YoELIFVGDdBW9UirngZtBEomglo12ACtCIOVqCYS96UGkvFNJEEQ0dUSdmWquaPyUHXd80TQsEeilctehuEXJSJVnXFVVy1YPVL1SbllByOn6y4tPldilEuUyLcRyzqIWU-Vm5ZF8Z1Q6kC5VCgHIpIFmFh5TAlR-M0R_PGCU9vXMUhuYOYtvd-z8jB5mrbPAdNeFO9MHj5CVZAjtQ |
| linkProvider | IOP Publishing |
| openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=Low+power+fluorine+plasma+effects+on+electrical+reliability+of+AlGaN%2FGaN+high+electron+mobility+transistor&rft.jtitle=%E4%B8%AD%E5%9B%BD%E7%89%A9%E7%90%86B%EF%BC%9A%E8%8B%B1%E6%96%87%E7%89%88&rft.au=%E6%9D%A8%E5%87%8C+%E5%91%A8%E5%B0%8F%E4%BC%9F+%E9%A9%AC%E6%99%93%E5%8D%8E+%E5%90%95%E7%8E%B2+%E6%9B%B9%E8%89%B3%E8%8D%A3+%E5%BC%A0%E8%BF%9B%E6%88%90+%E9%83%9D%E8%B7%83&rft.date=2017&rft.issn=1674-1056&rft.eissn=2058-3834&rft.volume=26&rft.issue=1&rft.spage=433&rft.epage=437&rft_id=info:doi/10.1088%2F1674-1056%2F26%2F1%2F017304&rft.externalDocID=671189401 |
| thumbnail_s | http://utb.summon.serialssolutions.com/2.0.0/image/custom?url=http%3A%2F%2Fimage.cqvip.com%2Fvip1000%2Fqk%2F85823A%2F85823A.jpg |