Degradation of AlGaN/GaN high-electron mobility transistors in the current-controlled off-state breakdown

• Published in: Journal of applied physics Vol. 115; no. 16
• Main Authors: Kuzmik, J., Jurkovič, M., Gregušová, D., Ťapajna, M., Brunner, F., Cho, M., Meneghesso, G., Würfl, J.
• Format: Journal Article
• Language: English
• Published: Melville American Institute of Physics 28.04.2014
• Subjects: ALUMINIUM COMPOUNDS; Aluminum gallium nitrides; Applied physics; Avalanches; BREAKDOWN; Buffers; CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; Degradation; ELECTRIC POTENTIAL; ELECTRON MOBILITY; GALLIUM NITRIDES; HETEROJUNCTIONS; High electron mobility transistors; High voltages; INTERFACES; LEAKAGE CURRENT; Potential barriers; Semiconductor devices; STRESSES; SURFACES; TRANSISTORS

We investigate degradation mechanisms in AlGaN/GaN HEMTs which were repeatedly driven into the current-controlled off-state breakdown or subject to 60 s voltage- or current-controlled off state stresses. The current-controlled sweep in to the breakdown allows the sustainability of breakdown that can...