Degradation of AlGaN/GaN high-electron mobility transistors in the current-controlled off-state breakdown - Kuzmik, J.; Jurkovič, M.; Gregušová, D.; Ťapajna, M.; Brunner, F.; Cho, M.; Meneghesso, G.; Würfl, J. (Journal of applied physics, 2014)
Keywords: ALUMINIUM COMPOUNDS; Aluminum gallium nitrides; Applied physics; Avalanches; BREAKDOWN; Buffers; CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; Degradation; ELECTRIC POTENTIAL; ELECTRON MOBILITY; GALLIUM NITRIDES; HETEROJUNCTIONS; High electron mobility transistors; High voltages; INTERFACES; LEAKAGE CURRENT; Potential barriers; Semiconductor devices; STRESSES; SURFACES; TRANSISTORS