Growth of Ge islands on SrTiO3 (001) 2×1 reconstructed surface: Epitaxial relationship and effect of the temperature

• Published in: Surface science Vol. 624; pp. 130 - 134
• Main Authors: Gobaut, B., Penuelas, J., Benamrouche, A., Robach, Y., Blanc, N., Favre-Nicolin, V., Renaud, G., Largeau, L., Saint-Girons, G.
• Format: Journal Article
• Language: English
• Published: Kidlington Elsevier B.V 01.06.2014; Elsevier
• Subjects: Condensed Matter; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Epitaxy; Exact sciences and technology; Materials Science; Physics; X-ray diffraction; X-ray diffraction; Epitaxy; Atomic force microscopy; Inorganic compounds; Semiconductor materials; Transition element compounds; Perovskites; XRD; Texture; Film growth; Surface structure; Surface reconstruction; Molecular beam epitaxy; Strontium titanates; Germanium; Island structure
• ISSN: 0039-6028; 1879-2758
• DOI: 10.1016/j.susc.2014.02.009

The structural properties of Ge islands grown by molecular beam epitaxy on SrTiO3 (001) substrates are investigated. We report on the effect of the temperature on the epitaxial relationship and morphology of the Ge islands. By combining X-ray diffraction measurements and atomic force microscopy we evidence a correlation between the island size and shape, the structural properties of the interface and the sample texture. In particular, we show that the growth temperature affects the nature of the interface between the semiconductor and the perovskite oxide and thus the island orientation, that evolves from fully (001) oriented to a mixture of (111) and (001) oriented islands. •Ge islands were grown on SrTiO3 cleaned (001) surfaces by molecular beam epitaxy.•Several competing crystal orientation and epitaxy relationship were found.•Parameters that allow for tuning the crystal orientation are given.