Electrical and mechanical properties of diluted magnetic semiconductor Zn1−xMnxS nanocrystalline films

• Published in: Current applied physics Vol. 9; no. 2; pp. 431 - 434
• Main Authors: Sreekantha Reddy, D., Kang, B., Yu, S.C., Dwarakanadha Reddy, Y., Sharma, S.K., Gunasekhar, K.R., Rao, K.N., Sreedhara Reddy, P.
• Format: Journal Article
• Language: English
• Published: 한국물리학회 01.03.2009
• Subjects: 물리학
• ISSN: 1567-1739; 1878-1675
• DOI: 10.1016/j.cap.2008.04.001

Nanostructured Zn1-xMnxS films (0 ≼ x ≼ 0.25) were deposited on glass substrates by simple resistive thermal evaporation technique. All the films were deposited at 300 K in a vacuum of 2 × 10-6 m bar. All the films temperature dependence of resistivity revealed semiconducting behaviour of the samples. Hot probe test revealed that all the samples exhibited n-type conductivity. The nanohardness of the films ranges from 4.7 to 9.9 GPa, Young’s modulus value ranging 69.7–94.2 GPa. KCI Citation Count: 9