Mittmann, T., Fengler, F. P., Richter, C., Park, M. H., Mikolajick, T., & Schroeder, U. (2017). Optimizing process conditions for improved Hf1−xZrxO2 ferroelectric capacitor performance. Microelectronic engineering, 178, 48-51. https://doi.org/10.1016/j.mee.2017.04.031
Chicago Style (17th ed.) CitationMittmann, Terence, Franz P.G Fengler, Claudia Richter, Min Hyuk Park, Thomas Mikolajick, and Uwe Schroeder. "Optimizing Process Conditions for Improved Hf1−xZrxO2 Ferroelectric Capacitor Performance." Microelectronic Engineering 178 (2017): 48-51. https://doi.org/10.1016/j.mee.2017.04.031.
MLA (9th ed.) CitationMittmann, Terence, et al. "Optimizing Process Conditions for Improved Hf1−xZrxO2 Ferroelectric Capacitor Performance." Microelectronic Engineering, vol. 178, 2017, pp. 48-51, https://doi.org/10.1016/j.mee.2017.04.031.