High-frequency Driving Circuit and Loss Analysis of SIC MOSFET Based on Discrete Components

• Published in: Journal of electrical engineering & technology Vol. 19; no. 4; pp. 2401 - 2411
• Main Authors: Yue, Gai-Li, Wang, Zi-Jing, Xiang, Fu-Wei, Xu, Zhen-Zhen
• Format: Journal Article
• Language: English
• Published: Singapore Springer Nature Singapore 01.05.2024; 대한전기학회
• Subjects: Electrical Engineering; Electrical Machines and Networks; Electronics and Microelectronics; Engineering; Instrumentation; Original Article; Power Electronics; 전기공학; Discrete components; High-frequency drive; Silicon carbide metal oxide semiconductor transistor; Low loss; Crosstalk

To reduce the loss of the high-frequency drive circuit of silicon carbide metal oxide semiconductor transistor (SiC MOSFET) and to better utilize the performance of the SiC MOSFET, a high-frequency drive circuit based on discrete components (DC-RGD) is proposed in this paper. The inductance is added...