Exploring conductivity in ex-situ doped Si thin films as thickness approaches 5 nm

• Published in: Journal of applied physics Vol. 125; no. 22
• Main Authors: MacHale, John, Meaney, Fintan, Kennedy, Noel, Eaton, Luke, Mirabelli, Gioele, White, Mary, Thomas, Kevin, Pelucchi, Emanuele, Petersen, Dirch Hjorth, Lin, Rong, Petkov, Nikolay, Connolly, James, Hatem, Chris, Gity, Farzan, Ansari, Lida, Long, Brenda, Duffy, Ray
• Format: Journal Article
• Language: English
• Published: Melville American Institute of Physics 14.06.2019
• Subjects: Applied physics; Arsenic; Contact resistance; Density functional theory; Doping; Electric contacts; Electrical resistivity; Film thickness; Ion implantation; Material properties; Monolayers; Nanowires; Parasitics (electronics); Phosphorus; Silicon films; Thin films; Vapor phases

Silicon (Si) has been scaled below 10 nm in multigate and silicon-on-insulator (SOI) device technologies, but clearly Si thickness cannot be reduced indefinitely, as we will run out of atoms eventually. As thickness approaches 5 nm, surfaces and interfaces will significantly impact the electrical be...