Impurity Band Formation as a Route to Thermoelectric Power Factor Enhancement in n‐type XNiSn Half‐Heuslers

• Published in: Advanced Physics Research Vol. 4; no. 6
• Main Authors: Quinn, Robert J., Go, Yuji, Naden, Aaron B., Bojtor, Andras, Paráda, Gabor, Shawon, Ashiq K. M. A., Domosud, Kamil, Refson, Keith, Zevalkink, Alexandra, Neophytou, Neophytos, Bos, Jan‐Willem G.
• Format: Journal Article
• Language: English
• Published: Wiley-VCH 01.06.2025
• Subjects: band engineering; half‐heusler thermoelectrics; impurity bands; Seebeck effect; TiNiSn

Bandstructure engineering is a key route for thermoelectric performance enhancement. Here, 20–50% Seebeck (S) enhancement is reported for XNiCuySn half‐Heusler samples based on X = Ti. This novel electronic effect is attributed to the emergence of impurity bands of finite extent, due to the Cu dopan...