Influence of processing and annealing steps on electrical properties of InAlN/GaN high electron mobility transistor with Al2O3 gate insulation and passivation

• Published in: Solid-state electronics Vol. 67; no. 1; pp. 74 - 78
• Main Authors: CICO, K, GREGUSOVA, D, KUZMIK, J, JURKOVIC, M, ALEXEWICZ, A, DI FORTE POISSON, M.-A, POGANY, D, STRASSER, G, DELAGE, S, FRÖHLICH, K
• Format: Journal Article
• Language: English
• Published: Kidlington Elsevier 2012
• Subjects: Applied sciences; Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.); Compound structure devices; Cross-disciplinary physics: materials science; rheology; Electronics; Exact sciences and technology; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Microelectronic fabrication (materials and surfaces technology); Physics; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Transistors; Gate current; Current collapse; Binary compound; Heat treatment; In situ; Temperature treatment; InAlN; Al; Gallium nitride; mobility transistor; Thin film; O; Processing; High electron mobility transistor; Microelectronic fabrication; Monitor; Sheet resistivity; GaN; Drain current; Oxidation; Transconductance; Electrical characteristic; Passivation; Insulation; Annealing; Aluminium nitride; MOS structure; Metal oxide semiconductor high electron; Drain; Interface states; MOCVD; Surface treatment; Forming gas; Thin oxide film; Field effect transistor; Heterostructure; Dielectric thin films; Gate-lag; Leakage current; High k dielectric; Alumina; Heterostructures; Schottky barrier
• ISSN: 0038-1101; 1879-2405
• DOI: 10.1016/j.sse.2011.09.002