Molecular dynamics simulation analyses on injection angle dependence of SiO2 sputtering yields by fluorocarbon beams

• Published in: Thin solid films Vol. 515; no. 12; pp. 4883 - 4886
• Main Authors: Kawase, Tomohito, Hamaguchi, Satoshi
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Lausanne Elsevier Science 23.04.2007
• Subjects: Cross-disciplinary physics: materials science; rheology; Deposition by sputtering; Etching and cleaning; Exact sciences and technology; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Physics; Physics of gases, plasmas and electric discharges; Physics of plasmas and electric discharges; Plasma applications; Inorganic compounds; Digital simulation; Molecular dynamics method; Molecular dynamics; Theoretical study; Fluorocarbon; Molecular dynamics simulations; Silicon oxides; Plasma etching; Angular variation; Surface plasma interaction; Sputter deposition; Plasma surface interaction