Mechanism Analysis of Current--Voltage Characteristic in a Lightly Doped Drain Polycrystalline Silicon Thin-Film Transistor Using Activation Energy

• Published in: Japanese Journal of Applied Physics Vol. 51; no. 3; pp. 03CA05 - 03CA05-5
• Main Authors: Kimura, Mutsumi, Nakashima, Akihiro
• Format: Journal Article
• Language: English
• Published: The Japan Society of Applied Physics 01.03.2012

We have analyzed the mechanism of the current--voltage characteristic in a lightly doped drain (LDD) polycrystalline silicon (poly-Si) thin-film transistor (TFT) by investigating the activation energy ($E_{\text{a}}$) in an experiment and the energy band calculated using device simulation. In the of...