APA (7th ed.) Citation

Kimura, M., & Nakashima, A. (2012). Mechanism Analysis of Current--Voltage Characteristic in a Lightly Doped Drain Polycrystalline Silicon Thin-Film Transistor Using Activation Energy. Japanese Journal of Applied Physics, 51(3), 03CA05-03CA05-5. https://doi.org/10.1143/JJAP.51.03CA05

Chicago Style (17th ed.) Citation

Kimura, Mutsumi, and Akihiro Nakashima. "Mechanism Analysis of Current--Voltage Characteristic in a Lightly Doped Drain Polycrystalline Silicon Thin-Film Transistor Using Activation Energy." Japanese Journal of Applied Physics 51, no. 3 (2012): 03CA05-03CA05-5. https://doi.org/10.1143/JJAP.51.03CA05.

MLA (9th ed.) Citation

Kimura, Mutsumi, and Akihiro Nakashima. "Mechanism Analysis of Current--Voltage Characteristic in a Lightly Doped Drain Polycrystalline Silicon Thin-Film Transistor Using Activation Energy." Japanese Journal of Applied Physics, vol. 51, no. 3, 2012, pp. 03CA05-03CA05-5, https://doi.org/10.1143/JJAP.51.03CA05.