40 nm width structure of GaAs fabricated by fine focused ion beam lithography and chlorine reactive ion etching

A 40 nm width structure of GaAs is fabricated by Be ++ fine focused ion beam lithography and chlorine reactive ion etching using electron beam excited plasma (EBEP). The nanometer structure of the fabricated GaAs has a high aspect ratio of about 17 and a vertical side wall. It is found that the fabr...

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 27; no. 6; pp. L1160 - L1161
Main Authors SHIOKAWA, T, KIM, P. H, HAMAGAKI, M, HARA, T, AOYAGI, Y, TOYODA, K, NAMBA, S
Format Journal Article
LanguageEnglish
Published Tokyo Japanese journal of applied physics 01.06.1988
Subjects
Applied sciences
Electronics
Exact sciences and technology
Microelectronic fabrication (materials and surfaces technology)
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Gallium Arsenides
Plasma
Microelectronic fabrication
Reactive ion etching
Engraving
Chlorine
Focusing
Ion beam
Electron beam
Miniaturization
Excited state
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Summary:A 40 nm width structure of GaAs is fabricated by Be ++ fine focused ion beam lithography and chlorine reactive ion etching using electron beam excited plasma (EBEP). The nanometer structure of the fabricated GaAs has a high aspect ratio of about 17 and a vertical side wall. It is found that the fabrication process has a high potential for nanometer microfabrication.
ISSN:0021-4922
1347-4065
DOI:10.1143/jjap.27.l1160