Reliability of GaAs-based semiconductor diode lasers: 0.6-1.1 mu m - Yellen, S.L.; Shepard, A.H.; Dalby, R.J.; Baumann, J.A.; Serreze, H.B.; Guido, T.S.; Soltz, R.; Bystrom, K.J.; Harding, C.M.; Waters, R.G. (IEEE journal of quantum electronics, 1993)
Keywords: Aluminum; Capacitive sensors; Degradation; Failure analysis; Gallium arsenide; Indium gallium arsenide; Quantum well lasers; Semiconductor device reliability; Semiconductor diodes; Semiconductor lasers