W-plug via electromigration in CMOS process

• Published in: Journal of semiconductors Vol. 30; no. 5; pp. 117 - 120
• Main Author: 赵文彬 陈海峰 肖志强 李蕾蕾 于宗光
• Format: Journal Article
• Language: English
• Published: IOP Publishing 01.05.2009
• Subjects: CMOS工艺; 失效机理; 插件; 故障发生; 深亚微米CMOS; 电流密度; 电迁移; 金属互连

We analyze the failure mechanism of W-plug via electromigration made in a 0.5-μm CMOS SPTM process. Failure occurs at the top or bottom of a W-plug via. We design a series of via chains, whose size ranges from 0.35 to 0.55μm. The structure for the via electromigration test is a long via chain, and t...