Structural and photoluminescence properties of Cr3+ doped LaVO4 phosphor
In this work, we have studied the structural and photoluminescence properties of Cr3+ doped LaVO4 phosphor prepared by solid state reaction method. The XRD patterns of phosphors give an idea about the unit cell volume, crystallite size and crystalline nature. The SEM images provide the morphological...
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Published in | Solid state sciences Vol. 129; p. 106904 |
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Main Authors | , , , , , |
Format | Journal Article |
Language | English |
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Elsevier Masson SAS
01.07.2022
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Abstract | In this work, we have studied the structural and photoluminescence properties of Cr3+ doped LaVO4 phosphor prepared by solid state reaction method. The XRD patterns of phosphors give an idea about the unit cell volume, crystallite size and crystalline nature. The SEM images provide the morphological features of the phosphor samples. The unit cell volume and the particles size of the Cr3+ doped LaVO4 phosphors decrease on increasing concentration of Cr3+ ion. The elements present in the Cr3+ doped phosphors have been analyzed using EDS and color mapping techniques. The FTIR spectra of Cr3+ doped LaVO4 phosphors specify the vibrational bands present in the samples. The UV–vis absorption and PL excitation spectra of the phosphor samples give information about the excitation wavelengths. The optical band gap of LaVO4 phosphor is 3.56 eV, which decreases on increasing concentration of Cr3+ ion. The Cr3+ doped LaVO4 phosphor gives yellow (581 nm), red (634 nm) and NIR (700 and 765 nm) emissions upon 428 and 467 nm excitations, respectively. The lifetime of Cr3+ doped LaVO4 phosphor decreases on increasing concentration of Cr3+ ion. The Cr3+ doped phosphor also shows heat generation capacity upon 980 nm excitation. Therefore, the Cr3+ doped LaVO4 phosphor may be used for solid state lighting, NIR sources and heat generating devices.
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•The Cr3+ doped LaVO4 phosphor was prepared by solid state reaction method.•The unit cell volume and particles size of phosphor decrease with Cr3+ ion concentration.•The phosphor gives yellow, red and NIR emissions upon 428 and 467 nm excitations.•The average lifetime of phosphor decreases with Cr3+ ion concentration.•The Cr3+ doped phosphor also contains heat generation capacity upon 980 nm excitation. |
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AbstractList | In this work, we have studied the structural and photoluminescence properties of Cr3+ doped LaVO4 phosphor prepared by solid state reaction method. The XRD patterns of phosphors give an idea about the unit cell volume, crystallite size and crystalline nature. The SEM images provide the morphological features of the phosphor samples. The unit cell volume and the particles size of the Cr3+ doped LaVO4 phosphors decrease on increasing concentration of Cr3+ ion. The elements present in the Cr3+ doped phosphors have been analyzed using EDS and color mapping techniques. The FTIR spectra of Cr3+ doped LaVO4 phosphors specify the vibrational bands present in the samples. The UV–vis absorption and PL excitation spectra of the phosphor samples give information about the excitation wavelengths. The optical band gap of LaVO4 phosphor is 3.56 eV, which decreases on increasing concentration of Cr3+ ion. The Cr3+ doped LaVO4 phosphor gives yellow (581 nm), red (634 nm) and NIR (700 and 765 nm) emissions upon 428 and 467 nm excitations, respectively. The lifetime of Cr3+ doped LaVO4 phosphor decreases on increasing concentration of Cr3+ ion. The Cr3+ doped phosphor also shows heat generation capacity upon 980 nm excitation. Therefore, the Cr3+ doped LaVO4 phosphor may be used for solid state lighting, NIR sources and heat generating devices.
[Display omitted]
•The Cr3+ doped LaVO4 phosphor was prepared by solid state reaction method.•The unit cell volume and particles size of phosphor decrease with Cr3+ ion concentration.•The phosphor gives yellow, red and NIR emissions upon 428 and 467 nm excitations.•The average lifetime of phosphor decreases with Cr3+ ion concentration.•The Cr3+ doped phosphor also contains heat generation capacity upon 980 nm excitation. |
ArticleNumber | 106904 |
Author | Kumar, Dinesh Fulari, Vijay Janardhan Rai, Ekta Rai, Shyam Bahadur Yadav, Ram Sagar Singh, Akhilesh Kumar |
Author_xml | – sequence: 1 givenname: Ekta surname: Rai fullname: Rai, Ekta organization: Department of Physics, Shivaji University, Kolhapur 416004, India – sequence: 2 givenname: Ram Sagar surname: Yadav fullname: Yadav, Ram Sagar email: ramsagaryadav@gmail.com organization: Department of Zoology, Institute of Science, Banaras Hindu University, Varanasi 221005, India – sequence: 3 givenname: Dinesh surname: Kumar fullname: Kumar, Dinesh organization: School of Materials Science and Technology, Indian Institute of Technology (Banaras Hindu University), Varanasi 221005, India – sequence: 4 givenname: Akhilesh Kumar surname: Singh fullname: Singh, Akhilesh Kumar organization: School of Materials Science and Technology, Indian Institute of Technology (Banaras Hindu University), Varanasi 221005, India – sequence: 5 givenname: Vijay Janardhan surname: Fulari fullname: Fulari, Vijay Janardhan organization: Department of Physics, Shivaji University, Kolhapur 416004, India – sequence: 6 givenname: Shyam Bahadur orcidid: 0000-0002-6321-1038 surname: Rai fullname: Rai, Shyam Bahadur email: sbrai49@yahoo.co.in organization: Department of Physics, Institute of Science, Banaras Hindu University, Varanasi 221005, India |
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