Minimization of X-ray mask distortion by two-dimensional finite element method simulation

X-ray mask distortion caused by absorber stress is quantitatively analyzed by using two-dimensional simulation. Simulated results successfully predict the mask pattern distortion in practical mask structures. A square mask window is better than a circular one because the distortion for square window...

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 29; no. 10; pp. 2203 - 2206
Main Authors KISHIMOTO, A, KUNIYOSHI, S, SAITO, N, SOGA, T, MOCHIJI, K, KIMURA, T
Format Journal Article
LanguageEnglish
Published Tokyo Japanese journal of applied physics 01.10.1990
Subjects
Applied sciences
Electronics
Exact sciences and technology
Microelectronic fabrication (materials and surfaces technology)
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Finite element method
VLSI circuit
Computer simulation
Lithography
Saturable absorber
Theoretical study
Mask
Distortion
X ray
Modeling
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Summary:X-ray mask distortion caused by absorber stress is quantitatively analyzed by using two-dimensional simulation. Simulated results successfully predict the mask pattern distortion in practical mask structures. A square mask window is better than a circular one because the distortion for square windows can be minimized by reducing the pattern length. In addition, it is found that the maximum distortion is virtually the same regardless of the number of LSI chips within the square window mask.
ISSN:0021-4922
1347-4065
DOI:10.1143/jjap.29.2203