Optical and Electrical Properties of μ-Slice InGaN/GaN Light Emitting Diodes Shaped by Focused Ion Beam Process
In this study, slice-type GaN-based light-emitting diodes (μ-slice LEDs) scaled down to a few micrometers using focused ion beam (FIB) process were demonstrated. Electroluminescence peak wavelengths ($\lambda_{\text{p}}$) of the single μ-slice LEDs were nearly independent of driving current density...
Saved in:
Published in | Applied physics express Vol. 4; no. 3; pp. 032104 - 032104-3 |
---|---|
Main Authors | , , , , , , |
Format | Journal Article |
Language | English |
Published |
The Japan Society of Applied Physics
01.03.2011
|
Online Access | Get full text |
Cover
Loading…
Be the first to leave a comment!