Optical and Electrical Properties of μ-Slice InGaN/GaN Light Emitting Diodes Shaped by Focused Ion Beam Process

In this study, slice-type GaN-based light-emitting diodes (μ-slice LEDs) scaled down to a few micrometers using focused ion beam (FIB) process were demonstrated. Electroluminescence peak wavelengths ($\lambda_{\text{p}}$) of the single μ-slice LEDs were nearly independent of driving current density...

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Bibliographic Details
Published inApplied physics express Vol. 4; no. 3; pp. 032104 - 032104-3
Main Authors Hsu, Che-Kang, Sheu, Jinn-Kong, Wang, Jia-Kuen, Lee, Ming-Lun, Chang, Kuo-Hua, Tu, Shang-Ju, Lai, Wei-Chih
Format Journal Article
LanguageEnglish
Published The Japan Society of Applied Physics 01.03.2011
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