Optical and Electrical Properties of μ-Slice InGaN/GaN Light Emitting Diodes Shaped by Focused Ion Beam Process

In this study, slice-type GaN-based light-emitting diodes (μ-slice LEDs) scaled down to a few micrometers using focused ion beam (FIB) process were demonstrated. Electroluminescence peak wavelengths ($\lambda_{\text{p}}$) of the single μ-slice LEDs were nearly independent of driving current density...

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Published inApplied physics express Vol. 4; no. 3; pp. 032104 - 032104-3
Main Authors Hsu, Che-Kang, Sheu, Jinn-Kong, Wang, Jia-Kuen, Lee, Ming-Lun, Chang, Kuo-Hua, Tu, Shang-Ju, Lai, Wei-Chih
Format Journal Article
LanguageEnglish
Published The Japan Society of Applied Physics 01.03.2011
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Abstract In this study, slice-type GaN-based light-emitting diodes (μ-slice LEDs) scaled down to a few micrometers using focused ion beam (FIB) process were demonstrated. Electroluminescence peak wavelengths ($\lambda_{\text{p}}$) of the single μ-slice LEDs were nearly independent of driving current density due to the fact that the effects of joule heating and band filling on the shift of $\lambda_{\text{p}}$ compete with each other. The smaller full width of half maximum of electroluminescence peaks observed from the μ-slice LEDs could result from the effect of strain release after the FIB process and thermal annealing during the FIB process on sliced structures.
AbstractList In this study, slice-type GaN-based light-emitting diodes (μ-slice LEDs) scaled down to a few micrometers using focused ion beam (FIB) process were demonstrated. Electroluminescence peak wavelengths ($\lambda_{\text{p}}$) of the single μ-slice LEDs were nearly independent of driving current density due to the fact that the effects of joule heating and band filling on the shift of $\lambda_{\text{p}}$ compete with each other. The smaller full width of half maximum of electroluminescence peaks observed from the μ-slice LEDs could result from the effect of strain release after the FIB process and thermal annealing during the FIB process on sliced structures.
Author Wang, Jia-Kuen
Hsu, Che-Kang
Sheu, Jinn-Kong
Tu, Shang-Ju
Lai, Wei-Chih
Lee, Ming-Lun
Chang, Kuo-Hua
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Notes (a) Typical image of broad-area LEDs taken by optical microscopy (b) Schematic of the structure of μ-slice LED (c) Typical SEM image of the μ-slice LEDs. The inset is an enlarged image. (a) Typical forward current density--voltage ($J$--$V$) characteristics of the fabricated LEDs. The inset shows the forward $J$--$V$ curves in semilogarithmic scale (b) Typical reverse $J$--$V$ characteristics of the broad-area and μ-slice LEDs. (a) Peak wavelengths and (b) FWHM of EL spectra taken from the μ-slice and broad-area LEDs as a function of forward current density. The inset of (a) shows normalized integral EL spectra of μ-slice and broad-area LEDs under different current density.
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