Impact of Mole Fraction Variation on the Analog/RF Performance of Quaternary InAlGaN DG MOS-HEMTs

• Published in: Journal of electronic materials Vol. 51; no. 5; pp. 2608 - 2616
• Main Authors: Ghosh, Sushmita, Bagla, Gautam, Mukherjee, Hrit, Kar, Mousiki, Kundu, Atanu
• Format: Journal Article
• Language: English
• Published: New York Springer US 01.05.2022; Springer Nature B.V
• Subjects: Aluminum; Capacitance; Characterization and Evaluation of Materials; Chemistry and Materials Science; Conduction bands; Electronics and Microelectronics; Gallium; High electron mobility transistors; Indium; Instrumentation; Materials Science; Metal oxide semiconductors; MOS devices; Optical and Electronic Materials; Original Research Article; Radio frequency; Semiconductor devices; Solid State Physics; Transconductance; 2DEG; HEMT; Analog; InAlGaN; mole fraction; quaternary; symmetric underlap
• ISSN: 0361-5235; 1543-186X
• DOI: 10.1007/s11664-022-09533-7

In this paper, the analog and radio-frequency (RF) performance of a symmetric underlapped quaternary InAlGaN double-gated metal oxide semiconductor high-electron-mobility transistor (MOS-HEMT) with varying mole fractions of indium, aluminum, and gallium is presented. The mole fraction of aluminum ( x ) is fixed at 0.06 and that of indium ( y ) is varied from 0.01 to 0.10 at four different values. The analog parameters explored are drain current density ( I d ), transconductance ( g m ), intrinsic gain ( g m r 0 ), and transconductance generation factor ( g m / I d ). The device shows a certain trend for 0.01 ≤ y ≤ 0.04 and reverses for 0.04 ≤ y ≤ 0.10. Relative evaluation of the conduction band energy (CBE) profile is used to decipher the reason behind this. The RF performance is also assessed using the figures of merit (FOMs) including gate-to-source capacitance ( C gs ), gate-to-drain capacitance ( C gd ), total gate capacitance ( C gg ), cutoff frequency ( f T ), and the maximum frequency of oscillation ( f max ).