Defect Research in Cs2LiYCl6:Ce Crystal Scintillators

• Published in: Journal of electronic materials Vol. 52; no. 3; pp. 1958 - 1967
• Main Authors: Zhu, Mengqi, Wang, Biao, Jia, Xinhui, Zhang, Yutong, Li, Jing, Wang, Jiyang
• Format: Journal Article
• Language: English
• Published: New York Springer US 01.03.2023; Springer Nature B.V
• Subjects: Bridgman method; Carrier mobility; Cerium; Characterization and Evaluation of Materials; Chemistry and Materials Science; Cooling rate; Crack propagation; Crystal defects; Crystal growth; Density; Doppler effect; EFG (crystal growth); Electronics and Microelectronics; High temperature; Instrumentation; Materials Science; Optical and Electronic Materials; Original Research Article; Raw materials; Red shift; Scintillation counters; Solid State Physics; Spectra; Temperature distribution; Cs; Ce; trap-state density; morphology; LiYCl; radioluminescence spectra; scintillator; crystal growth; segregation

As a promising material for dual γ -ray and neutron detection, Cs 2 LiYCl 6 :Ce (CLYC:Ce) has been increasingly studied and developed. In this work, CLYC:Ce is grown by two different growth methods, edge-defined film-fed growth (EFG) and the vertical Bridgman method. The phase segregation, macroscop...